Dan Ritter
Technion - Israel Institute of Technology
H-index: 39
Asia-Israel
Top articles of Dan Ritter
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach | IEEE Transactions on Electron Devices | Petros Beleniotis Christos Zervos Sascha Krause Serguei Chevtchenko Dan Ritter | 2024/4/22 |
Two-Dimensional Carrier Gas at a Polar Interface without Surface Band Gap States: A First-Principles Perspective | Bulletin of the American Physical Society | Andrew Rappe Leeor Kronik Dan Ritter | 2024/3/7 |
The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs | Christos Zervos Petros Beleniotis Sascha Krause Dan Ritter Matthias Rudolph | 2023/9/18 | |
On the Influence of Transistor Dimensions on the Dispersive Behavior in AlGaN/GaN HEMT-Based PAs and Robust LNAs | Sascha Krause Christos Zervos Petros Beleniotis Dan Ritter Matthias Rudolph | 2022/6/19 | |
Enhanced Cooper-Pair Injection into a Semiconductor Structure by Resonant Tunneling | Physical Review Letters | Shlomi Bouscher Dmitry Panna Krishna Balasubramanian Shimon Cohen Dan Ritter | 2022/3/24 |
Space charge limited current in an ideal GaN heterojunction field effect transistor with no back-barrier | Solid State Communications | Durgesh C Tripathi D Ritter | 2021/7/1 |
Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect | Journal of Applied Physics | Igor Krylov Valentina Korchnoy Xianbin Xu Kamira Weinfeld Eilam Yalon | 2020/8/14 |
Insight into buffer trap-induced current saturation and current collapse in GaN RF heterojunction field-effect transistors | IEEE Transactions on Electron Devices | Durgesh C Tripathi Michael J Uren Dan Ritter | 2020/11/12 |
Co-Authors
