Hyunwoo Kim

Hyunwoo Kim

Seoul National University

H-index: 12

Asia-South Korea

About Hyunwoo Kim

Hyunwoo Kim, With an exceptional h-index of 12 and a recent h-index of 11 (since 2020), a distinguished researcher at Seoul National University, specializes in the field of Semiconductor Device, Process Integration, TCAD simulation.

His recent articles reflect a diverse array of research interests and contributions to the field:

Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor

Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation

Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer

Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction

Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory

Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT

Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation

Improvement Breakdown Voltage by a Using Crown-Shaped Gate

Hyunwoo Kim Information

University

Position

___

Citations(all)

564

Citations(since 2020)

355

Cited By

294

hIndex(all)

12

hIndex(since 2020)

11

i10Index(all)

20

i10Index(since 2020)

15

Email

University Profile Page

Seoul National University

Google Scholar

View Google Scholar Profile

Hyunwoo Kim Skills & Research Interests

Semiconductor Device

Process Integration

TCAD simulation

Top articles of Hyunwoo Kim

Title

Journal

Author(s)

Publication Date

Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor

Physica Scripta

Ju Hong Min

Dongho Shin

Hyunwoo Kim

Jang Hyun Kim

2024/3/22

Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation

IEEE Transactions on Electron Devices

Jiwon You

Hyunwoo Kim

Daewoong Kwon

2024/3/19

Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer

IEEE Electron Device Letters

Sang Woo Kim

Wonjun Shin

Munhyeon Kim

Ki Ryun Kwon

Jiyong Yim

...

2023/10/23

Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction

Journal of Semiconductor Technology and Science

Chaewon Yun

Sangwan Kim

Seongjae Cho

Il Hwan Cho

Hyunwoo Kim

...

2023/8

Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory

Semiconductor Science and Technology

Been Kwak

Hyunwoo Kim

Daewoong Kwon

2023/3/31

Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT

Micromachines

Ki Yeong Kim

Tae Hyun Hwang

Young Suh Song

Hyunwoo Kim

Jang Hyun Kim

2023/1/28

Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation

Semiconductor Science and Technology

Garam Kim

Hyunwoo Kim

Sangwan Kim

Jang Hyun Kim

2023/12/12

Improvement Breakdown Voltage by a Using Crown-Shaped Gate

Electronics

Dong Gyu Park

Hyunwoo Kim

Jang Hyun Kim

2023/1/17

Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping

Electronics

Jang Hyun Kim

Hyunwoo Kim

2023/12/8

Analytical Model of the Vertical Pinned Photodiode

IEEE Transactions on Electron Devices

Jiwon Lee

Edward van Sieleghem

Hyunwoo Kim

Jan Genoe

2022/8/19

Frequency doubler based on ferroelectric tunnel field-effect transistor

IEEE Transactions on Electron Devices

Hyunwoo Kim

Been Kwak

Jang Hyun Kim

Daewoong Kwon

2022/5/13

Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates

IEEE Transactions on Electron Devices

Been Kwak

Kitae Lee

Noh-Hwal Park

Seung Joon Jeon

Hyunwoo Kim

...

2022/2/10

Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor

Journal of Semiconductor Technology and Science

Hyunwoo Kim

Jang Hyun Kim

Daewoong Kwon

2022/2/1

Gate-normal negative capacitance tunnel field-effect transistor (TFET) with channel doping engineering

IEEE Transactions on Nanotechnology

Hyun Woo Kim

Daewoong Kwon

2021/3/24

Steep switching characteristics of L-shaped tunnel FET with doping engineering

IEEE Journal of the Electron Devices Society

Hyun Woo Kim

Daewoong Kwon

2021/3/17

Low-power vertical tunnel field-effect transistor ternary inverter

IEEE Journal of the Electron Devices Society

Hyun Woo Kim

Daewoong Kwon

2021/2/5

Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design

Japanese Journal of Applied Physics

Young Suh Song

Sangwan Kim

Garam Kim

Hyunwoo Kim

Jong-Ho Lee

...

2021/3/25

Methodology to investigate impact of grain orientation on threshold voltage and current variability in tunneling field-effect transistors

IEEE Journal of the Electron Devices Society

Jang Hyun Kim

Tae Chan Kim

Garam Kim

Hyun Woo Kim

Sangwan Kim

2020/10/23

Impact of body-biasing for negative capacitance field-effect transistor

Journal of Physics Communications

Hyun Woo Kim

Daewoong Kwon

2020/9/21

Demonstration of tunneling field-effect transistor ternary inverter

IEEE Transactions on Electron Devices

Hyun Woo Kim

Sihyun Kim

Kitae Lee

Junil Lee

Byung-Gook Park

...

2020/8/31

See List of Professors in Hyunwoo Kim University(Seoul National University)

Co-Authors

H-index: 48
Byung Gook Park

Byung Gook Park

Seoul National University

H-index: 47
Jong-Ho Lee

Jong-Ho Lee

Seoul National University

H-index: 22
Sangwan Kim

Sangwan Kim

Ajou University

H-index: 15
Jang Hyun Kim

Jang Hyun Kim

Pukyong National University

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