Dr. Manoj Kumar

About Dr. Manoj Kumar

Dr. Manoj Kumar, With an exceptional h-index of 10 and a recent h-index of 9 (since 2020), a distinguished researcher at Indian Institute of Technology Delhi, specializes in the field of Semiconductor devices, Multigate MOSFET.

His recent articles reflect a diverse array of research interests and contributions to the field:

Design of First Order Active Low Pass Filter using 22nm Gate All Around Silicon-on-Insulator Schottky Barrier MOSFET

Linearity Investigation of Ultra-Low-Power Cylindrical SOI Schottky Barrier MOSFET for Biomedical and 5G/LTE Circuits Application

A junctionless accumulation mode NC-FinFET gate underlap design for improved stability and self-heating reduction

Impact of gamma-ray radiation on DC and RF performance of 10-nm bulk N-channel FinFETs

SOI Schottky barrier nanowire MOSFET with reduced ambipolarity and enhanced electrostatic integrity

Dr. Manoj Kumar Information

University

Position

___

Citations(all)

392

Citations(since 2020)

296

Cited By

207

hIndex(all)

10

hIndex(since 2020)

9

i10Index(all)

11

i10Index(since 2020)

8

Email

University Profile Page

Indian Institute of Technology Delhi

Google Scholar

View Google Scholar Profile

Dr. Manoj Kumar Skills & Research Interests

Semiconductor devices

Multigate MOSFET

Top articles of Dr. Manoj Kumar

Title

Journal

Author(s)

Publication Date

Design of First Order Active Low Pass Filter using 22nm Gate All Around Silicon-on-Insulator Schottky Barrier MOSFET

Amit Saxena

Manoj Kumar

RK Sharma

RS Gupta

2021/12/22

Linearity Investigation of Ultra-Low-Power Cylindrical SOI Schottky Barrier MOSFET for Biomedical and 5G/LTE Circuits Application

Amit Saxena

RK Sharma

Manoj Kumar

RS Gupta

2021/5/19

A junctionless accumulation mode NC-FinFET gate underlap design for improved stability and self-heating reduction

IEEE Transactions on Electron Devices, doi: 10.1109/TED.2020.2997848.

M. Kumar

K. Aditya

and A. Dixit

2020/6

Impact of gamma-ray radiation on DC and RF performance of 10-nm bulk N-channel FinFETs

IEEE Transactions on Device and Materials Reliability

K Aditya

R Singh

M Kumar

R Vega

Abhisek Dixit

2020/10/27

SOI Schottky barrier nanowire MOSFET with reduced ambipolarity and enhanced electrostatic integrity

Journal of Electronic Materials

Amit Saxena

Manoj Kumar

RK Sharma

RS Gupta

2020/7

See List of Professors in Dr. Manoj Kumar University(Indian Institute of Technology Delhi)

Co-Authors

H-index: 26
Abhisek Dixit

Abhisek Dixit

Indian Institute of Technology Delhi

H-index: 11
Dr. Yogesh Pratap

Dr. Yogesh Pratap

University of Delhi

H-index: 6
Ramendra Singh

Ramendra Singh

Indian Institute of Technology Delhi

H-index: 6
Anil Kumar Bansal

Anil Kumar Bansal

Indian Institute of Technology Delhi

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