Abhisek Dixit
Indian Institute of Technology Delhi
H-index: 26
Asia-India
Top articles of Abhisek Dixit
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Impact of gate oxide thickness on flicker noise (1/f) in PDSOI n-channel FETs | Solid-State Electronics | Shruti Pathak Sumreti Gupta Aarti Rathi P Srinivasan Abhisek Dixit | 2024/4/16 |
Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications | IEEE Journal of the Electron Devices Society | Shruti Pathak Sumreti Gupta P Srinivasan Oscar H Gonzalez Fernando Guarin | 2024/2/13 |
Quantum-Dot-Based Thermometry Using 12-nm FinFET and Machine Learning Models | IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3353169 | S. K. Singh D. Sharma P. Srinivasan A. Dixit | 2024/1 |
Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications | Aarti Rathi Abhisek Dixit Naga Satish P Srinivasan Fernando Guarin | 2023/3/26 | |
Investigation and Modeling of Multifrequency CV Characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures | Solid-State Electronics, 2023, doi.org/10.1016/j.sse.2023.108820 | Sumreti Gupta Asifa Amin Reinaldo A. Vega Abhisek Dixit | 2023/11 |
Impact of RF Frequency Bands on the DC and Large Signal Reliability of a 45nm RFSOI NFET based Power Amplifier Cell | Aarti Rathi P Srinivasan Abhisek Dixit | 2023/3/7 | |
Time-dependent dielectric breakdown in 45-nm PD-SOI N-channel FETs at cryogenic temperatures for quantum computing applications | IEEE Transactions on Device and Materials Reliability | Asifa Amin Sumreti Gupta Purushothaman Srinivasan Oscar H Gonzalez Fernando Guarin | 2023/9/7 |
Effective Channel Mobility Extraction and Modeling of 10-nm Bulk CMOS FinFETs in Cryogenic Temperature Operation for Quantum Computing Applications | IEEE Transactions on Electron Devices Print ISSN: 0018-9383 Online ISSN: 1557-9646 Digital Object Identifier: 10.1109/TED.2023.3244159 | S. Gupta S. K. Singh R. A. Vega Abhisek Dixit | 2023/2 |
High-Temperature TDDB Investigation on High Performance-centered Hybrid HZO/HfON/Al2O3, Ferro-electric Charge-Trap (FEG) GaN-HEMT | IEEE Transactions on Electron Devices | Shivendra K. Rathaur Jui-Sheng Wu Tsung-Ying Yang Asifa Amin Abhisek Dixit | 2023/7 |
Investigation of Temperature Dependence of mmWave Power Amplifier Large Signal Reliability Performance | IEEE Transactions on Electron Devices, doi: 10.1109/TED.2022.3233939. | Aarti Rathi P. Srinivasan Fernando Guarin Abhisek Dixit | 2023/1 |
Temperature Dependent Study of Large-Signal Reliability of p-FET Based Power Amplifier for mmWave Applications | IEEE Transactions on Device and Materials Reliability | Aarti Rathi P. Srinivasan Abhisek Dixit | 2023/7 |
Compact Model of a Bulk FinFET Quantum Dot Towards Single Chip Integration of Qubits and Control Electronics for Quantum Computing Applications | IEEE Transactions on Electron Devices, doi:10.1109/TED.2023.3265943 | S. K. Singh D. Sharma R. A. Vega Abhisek Dixit | 2023/4 |
RF reliability of CMOS-based power amplifier cell for 5G mmWave applications | Aarti Rathi Abhisek Dixit P Srinivasan Oscar H Gonzalez Fernando Guarin | 2022/3/27 | |
Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications | Shivendra K Rathaur Tsung-Ying Yang Chih-Yi Yang Edward Yi Chang Heng-Tung Hsu | 2022/7/4 | |
Superior mm-wave Large Signal Power Amplifier Reliability of p-type FET in a 45-nm Partially-Depleted Silicon-On-Insulator RF Technology | IEEE Electron Device Letters | A. Rathi P. Srinivasan F. Guarin A. Dixit | 2022/3/4 |
Effect of Negative Back Bias on FDSOI Device Parameters down to Cryogenic Temperature | Anuj Bhardwaj Sujit Singh Anand Mishra David Petit Francois Paolini | 2022/7 | |
Accurate Modeling of Cryogenic Temperature Effects in 10-nm Bulk CMOS FinFETs Using the BSIM-CMG Model | IEEE Electron Device Letters | S. K. Singh S. Gupta R. A. Vega A. Dixit | 2022/3 |
A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT | IEEE Transactions on Device and Materials Reliability | Chih Yi Yang Chin Han Chung Wei Yu Cheng Jun Ma Sih Rong Wu | 2022/5/6 |
Characterization and Analysis of Hot Carrier Degradation under DC and Large-signal RF Stress in a PDSOI Floating-body NFET Based Power Amplifier Cell under WiFi operating … | IEEE Transactions on Device and Materials Reliability | A. Rathi P. Srinivasan F. Guarin A. Dixit | 2022/4 |
Deep cryogenic temperature TDDB in 45-nm PDSOI N-channel FETs for quantum computing applications | Asifa Amin Aarti Rathi Sujit K Singh Abhisek Dixit Oscar H Gonzalez | 2022/3/27 |
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