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Axel R Persson

About Axel R Persson

Axel R Persson, With an exceptional h-index of 13 and a recent h-index of 13 (since 2020), a distinguished researcher at Linköpings Universitet, specializes in the field of (S)TEM, nitrides, FIB, Electron Tomography, Environmental TEM.

His recent articles reflect a diverse array of research interests and contributions to the field:

Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

Hot Carrier Nanowire Transistors at the Ballistic Limit

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1− xN/GaN heterostructures (0.07≤ x≤ 0.42)

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

Mg segregation at inclined facets of pyramidal inversion domains in GaN: Mg

Axel R Persson Information

University

Position

___

Citations(all)

593

Citations(since 2020)

522

Cited By

251

hIndex(all)

13

hIndex(since 2020)

13

i10Index(all)

18

i10Index(since 2020)

18

Email

University Profile Page

Google Scholar

Axel R Persson Skills & Research Interests

(S)TEM

nitrides

FIB

Electron Tomography

Environmental TEM

Top articles of Axel R Persson

Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

Nanotechnology

2024/4/4

Anders Gustafsson
Anders Gustafsson

H-Index: 2

Axel R Persson
Axel R Persson

H-Index: 8

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Zhaoxia Bi
Zhaoxia Bi

H-Index: 10

Hot Carrier Nanowire Transistors at the Ballistic Limit

arXiv preprint arXiv:2403.06630

2024/3/11

M Kumar
M Kumar

H-Index: 1

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1− xN/GaN heterostructures (0.07≤ x≤ 0.42)

Journal of Applied Physics

2023/11/14

Axel R Persson
Axel R Persson

H-Index: 8

Mathias Schubert
Mathias Schubert

H-Index: 28

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

APL Materials

2023/11/1

Axel R Persson
Axel R Persson

H-Index: 8

Jawad Ul Hassan
Jawad Ul Hassan

H-Index: 17

Niklas Rorsman
Niklas Rorsman

H-Index: 24

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Semiconductor Science and Technology

2023/9/1

Axel R Persson
Axel R Persson

H-Index: 8

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Niklas Rorsman
Niklas Rorsman

H-Index: 24

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Applied Physics Letters

2023/7/10

Axel R Persson
Axel R Persson

H-Index: 8

Anders Gustafsson
Anders Gustafsson

H-Index: 2

Zhaoxia Bi
Zhaoxia Bi

H-Index: 10

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

Applied Physics Letters

2023/4/10

Mattias Thorsell
Mattias Thorsell

H-Index: 15

Niklas Rorsman
Niklas Rorsman

H-Index: 24

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Mg segregation at inclined facets of pyramidal inversion domains in GaN: Mg

Scientific Reports

2022/10/26

Axel R Persson
Axel R Persson

H-Index: 8

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

2022/6/1

Axel R Persson
Axel R Persson

H-Index: 8

Mattias Thorsell
Mattias Thorsell

H-Index: 15

Niklas Rorsman
Niklas Rorsman

H-Index: 24

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Journal of Applied Physics

2022/5/14

Axel R Persson
Axel R Persson

H-Index: 8

Niklas Rorsman
Niklas Rorsman

H-Index: 24

Muhammad Nawaz
Muhammad Nawaz

H-Index: 6

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP Advances

2022/5/1

Misagh Ghezellou
Misagh Ghezellou

H-Index: 2

Axel R Persson
Axel R Persson

H-Index: 8

Matthew Hilfiker
Matthew Hilfiker

H-Index: 2

Mathias Schubert
Mathias Schubert

H-Index: 28

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures

Nano Select

2022/2

Maryam Khalilian
Maryam Khalilian

H-Index: 3

David Lindgren
David Lindgren

H-Index: 28

Filip Lenrick
Filip Lenrick

H-Index: 15

Rainer Timm
Rainer Timm

H-Index: 16

Reine Wallenberg
Reine Wallenberg

H-Index: 34

Anders Gustafsson
Anders Gustafsson

H-Index: 2

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Semiconductor Science and Technology

2022/1/25

Axel R Persson
Axel R Persson

H-Index: 8

Daniel Sommer
Daniel Sommer

H-Index: 1

Mattias Thorsell
Mattias Thorsell

H-Index: 15

Vanya Darakchieva
Vanya Darakchieva

H-Index: 20

Niklas Rorsman
Niklas Rorsman

H-Index: 24

Time-resolved compositional mapping during in situ TEM studies

Ultramicroscopy

2021/3/1

Axel R Persson
Axel R Persson

H-Index: 8

Marcus Tornberg
Marcus Tornberg

H-Index: 6

Robin Sjökvist
Robin Sjökvist

H-Index: 0

Selective oxidation of benzyl alcohols with molecular oxygen as the oxidant using Ag-Cu catalysts supported on polyoxometalates

2021

Reine Wallenberg
Reine Wallenberg

H-Index: 34

Calculation of hole concentrations in Zn doped GaAs nanowires

Nanomaterials

2020/12/16

Jonas Johansson
Jonas Johansson

H-Index: 12

Axel R Persson
Axel R Persson

H-Index: 8

Aerotaxy: gas-phase epitaxy of quasi 1D nanostructures

Nanotechnology

2020/10/14

Axel R Persson
Axel R Persson

H-Index: 8

Reine Wallenberg
Reine Wallenberg

H-Index: 34

Jonas Johansson
Jonas Johansson

H-Index: 12

Complex Aerosol Nanostructures: Revealing the Phases from Multivariate Analysis on Elemental Maps Obtained by TEM-EDX

2020/9/1

Martin Ek
Martin Ek

H-Index: 20

Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs

ACS Applied Electronic Materials

2020/9/1

Abinaya Krishnaraja
Abinaya Krishnaraja

H-Index: 2

Johannes Svensson
Johannes Svensson

H-Index: 18

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Axel R Persson
Axel R Persson

H-Index: 8

Erik Lind
Erik Lind

H-Index: 25

Compressively-strained GaSb nanowires with core-shell heterostructures

Nano Research

2020/9

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Johannes Svensson
Johannes Svensson

H-Index: 18

Axel R Persson
Axel R Persson

H-Index: 8

Reine Wallenberg
Reine Wallenberg

H-Index: 34

See List of Professors in Axel R Persson University(Linköpings Universitet)