Zhongyunshen Zhu

About Zhongyunshen Zhu

Zhongyunshen Zhu, With an exceptional h-index of 9 and a recent h-index of 9 (since 2020), a distinguished researcher at Lunds Universitet, specializes in the field of Nanoelectronics, III-V, GAA-FET, Ferroelectrics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors

Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications

gm/I d g_m/I_d Analysis of vertical nanowire III–V TFETs

High Current Density Vertical Nanowire TFETs with I 60> 1μA/μm

Low-power, Self-aligned Vertical InGaAsSb NW PMOS with S< 100 mV/dec

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Sensing single domains and individual defects in scaled ferroelectrics

Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon

Zhongyunshen Zhu Information

University

Position

Department of Electrical and Information Technology Lund University

Citations(all)

235

Citations(since 2020)

218

Cited By

89

hIndex(all)

9

hIndex(since 2020)

9

i10Index(all)

9

i10Index(since 2020)

9

Email

University Profile Page

Google Scholar

Zhongyunshen Zhu Skills & Research Interests

Nanoelectronics

III-V

GAA-FET

Ferroelectrics

Top articles of Zhongyunshen Zhu

Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

2024/1/19

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications

2023/9/19

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

gm/I d g_m/I_d Analysis of vertical nanowire III–V TFETs

Electronics Letters

2023/9

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

High Current Density Vertical Nanowire TFETs with I 60> 1μA/μm

IEEE Access

2023/8/30

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Low-power, Self-aligned Vertical InGaAsSb NW PMOS with S< 100 mV/dec

IEEE Electron Device Letters

2023/5/19

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Nature Communications

2023/5/3

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Sensing single domains and individual defects in scaled ferroelectrics

Science Advances

2023/2/3

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon

IEEE Electron Device Letters

2022/5/2

Zhongyunshen Zhu
Zhongyunshen Zhu

H-Index: 6

Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si

ACS Applied Electronic Materials

2022/1/10

Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing

Nanotechnology

2021/11/24

Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs

ACS Applied Electronic Materials

2020/9/1

Compressively-strained GaSb nanowires with core-shell heterostructures

Nano Research

2020/9

See List of Professors in Zhongyunshen Zhu University(Lunds Universitet)

Co-Authors

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