Zhongyunshen Zhu
Lunds Universitet
H-index: 9
Europe-Sweden
Top articles of Zhongyunshen Zhu
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
2024/1/19
Zhongyunshen Zhu
H-Index: 6
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023/9/19
Zhongyunshen Zhu
H-Index: 6
gm/I d g_m/I_d Analysis of vertical nanowire III–V TFETs
Electronics Letters
2023/9
Zhongyunshen Zhu
H-Index: 6
High Current Density Vertical Nanowire TFETs with I 60> 1μA/μm
IEEE Access
2023/8/30
Zhongyunshen Zhu
H-Index: 6
Low-power, Self-aligned Vertical InGaAsSb NW PMOS with S< 100 mV/dec
IEEE Electron Device Letters
2023/5/19
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Nature Communications
2023/5/3
Zhongyunshen Zhu
H-Index: 6
Sensing single domains and individual defects in scaled ferroelectrics
Science Advances
2023/2/3
Zhongyunshen Zhu
H-Index: 6
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
IEEE Electron Device Letters
2022/5/2
Zhongyunshen Zhu
H-Index: 6
Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si
ACS Applied Electronic Materials
2022/1/10
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
Nanotechnology
2021/11/24
Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs
ACS Applied Electronic Materials
2020/9/1
Abinaya Krishnaraja
H-Index: 2
Johannes Svensson
H-Index: 18
Zhongyunshen Zhu
H-Index: 6
Axel R Persson
H-Index: 8
Erik Lind
H-Index: 25
Compressively-strained GaSb nanowires with core-shell heterostructures
Nano Research
2020/9
Zhongyunshen Zhu
H-Index: 6
Johannes Svensson
H-Index: 18
Axel R Persson
H-Index: 8
Reine Wallenberg
H-Index: 34
Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector
Nano letters
2020/4/15
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
Nanoscale
2020