Atsushi Ogura

Atsushi Ogura

Meiji University

H-index: 35

Asia-Japan

About Atsushi Ogura

Atsushi Ogura, With an exceptional h-index of 35 and a recent h-index of 20 (since 2020), a distinguished researcher at Meiji University,

His recent articles reflect a diverse array of research interests and contributions to the field:

Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain …

Standardization of laparoscopic pelvic exenteration; usefulness of lateral-first approach using the umbilical ligament as a reliable surgical landmark-A Video Vignette.

Prediction model of the risk for lateral local recurrence in locally advanced rectal cancer without enlarged lateral lymph nodes: Lessons from a Japanese multicenter pooled …

Assessing hard X-ray photoelectron spectroscopy as a new evaluation method for studying protein adsorption on anisotropic hydroxyapatite ceramics model

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Usefulness of fluorescent ureteral navigation in total pelvic exenteration using a two-team approach for locally recurrent pelvic malignancies-A video vignette.

Atsushi Ogura Information

University

Meiji University

Position

___

Citations(all)

6537

Citations(since 2020)

2289

Cited By

5292

hIndex(all)

35

hIndex(since 2020)

20

i10Index(all)

187

i10Index(since 2020)

62

Email

University Profile Page

Meiji University

Top articles of Atsushi Ogura

Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy

Authors

S Sugawa,R Yokogawa,A Ogura

Journal

Japanese Journal of Applied Physics

Published Date

2024/1/25

Using laser power sweep Raman spectroscopy, this research reports that the thermal transport changes with the wire width of silicon-germanium (SiGe) nanowires (NWs). The temperature in SiGe NWs was calculated using the relationship between Raman shift ω and temperature T (dω/dT) to evaluate the correlation between the thermal transport mechanism and SiGe NWs structure. We clarified that the thermal conductivity of the SiGe NWs decreases as the wire width becomes narrower. Also, a positional dependence of the thermal conductivity properties of the SiGe NWs was observed by laser power sweep Raman spectroscopy.

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Authors

Yuji Yamamoto,Wei-Chen Wen,Markus Andreas Schubert,Agnieszka Anna Corley-Wiciak,Sho Sugawa,Yuta Ito,Ryo Yokogawa,Han Han,Roger Loo,Atsushi Ogura,Bernd Tillack

Journal

Japanese Journal of Applied Physics

Published Date

2024/1/17

Locally dislocation-free SiGe-on-insulator (SGOI) is fabricated by CVD. Lateral selective SiGe growth of∼ 30%,∼ 45% and∼ 55% of Ge content is performed around∼ 1 μm square Si (001) pillar located under the center of a 6.3 μm square SiO 2 on Si-on-insulator substrate which is formed by H 2-HCl vapor-phase etching. In the deposited SiGe layer, tensile strain is observed by top-view. The degree of strain is slightly increased at the corner of the SiGe. The tensile strain is caused by the partial compressive strain of SiGe in lateral direction and thermal expansion difference between Si and SiGe. Slightly higher Ge incorporation is observed in higher tensile strain region. At the peaks formed between the facets of growth front, Ge incorporation is reduced. These phenomena are pronounced for SiGe with higher Ge contents. Locally dislocation-free SGOI, which is beneficial for emerging device integration, is formed …

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain …

Authors

Ryo Yokogawa,Sho Sugawa,Ichiro Yonenaga,Yasutomo Arai,Atsushi Ogura

Journal

Japanese Journal of Applied Physics

Published Date

2024/3/13

We reported the strain-free Raman shift (ω 0) for all vibration modes (Ge–Ge, Si–Ge, and Si–Si) over the entire Ge fraction range using silicon–germanium (SiGe) single-crystals which were strain-free without boundaries and buffer/substrate layers. The determined Ge-fraction-shift coefficients varied with the Ge fraction as linear for the Si–Si and Ge–Ge vibration modes and as nonlinear for the Si–Ge mode, respectively. The Raman shifts for all vibration mode over the entire Ge fraction range were shifted to the higher wavenumber side than previous studies, implying that the strain effect reported in previous studies can be completely excluded in the present study. We applied the derived ω 0 to biaxial strain and composition evaluation in a SiGe film grown on buffer/substrate layer.

Standardization of laparoscopic pelvic exenteration; usefulness of lateral-first approach using the umbilical ligament as a reliable surgical landmark-A Video Vignette.

Authors

Atsushi Ogura,Yuki Murata,Kay Uehara,Ryutaro Kobayashi,Masanori Sando,Tomoki Ebata

Journal

Colorectal Disease: the Official Journal of the Association of Coloproctology of Great Britain and Ireland

Published Date

2024/1/3

Standardization of laparoscopic pelvic exenteration; usefulness of lateral-first approach using the umbilical ligament as a reliable surgical landmark-A Video Vignette. - Abstract - Europe PMC Sign in | Create an account https://orcid.org Europe PMC Menu About Tools Developers Help Contact us Helpdesk Feedback Twitter Blog Tech blog Developer Forum Europe PMC plus Search life-sciences literature (43,422,032 articles, preprints and more) Search Advanced search Feedback This website requires cookies, and the limited processing of your personal data in order to function. By using the site you are agreeing to this as outlined in our privacy notice and cookie policy. Abstract Full text Standardization of laparoscopic pelvic exenteration; usefulness of lateral-first approach using the umbilical ligament as a reliable surgical landmark-A Video Vignette. Ogura A 1 , Murata Y 1 , Uehara K 2 , Kobayashi R 1 , Sando M 3 …

Prediction model of the risk for lateral local recurrence in locally advanced rectal cancer without enlarged lateral lymph nodes: Lessons from a Japanese multicenter pooled …

Authors

Atsushi Ogura,Akio Shiomi,Seiichiro Yamamoto,Koji Komori,Hiroki Hamamoto,Shoichi Manabe,Hiroshi Miyakita,Junji Okuda,Hiroshi Yatsuya,Kay Uehara

Journal

Annals of Gastroenterological Surgery

Published Date

2024/3

Aim Although the oncological impact of lateral lymph node dissection on enlarged lateral lymph nodes has been gradually accepted over the last decade, that on lateral lymph nodes without swelling remains doubtful. This study aimed to develop a prediction model for the future risk of lateral local recurrence and to clarify the value of adding lateral lymph node dissection in locally advanced rectal cancer without enlarged lateral lymph nodes. Methods This retrospective, multi‐institutional study recruited 812 patients with cStage II/III low rectal cancer without enlarged lateral lymph nodes <7 mm. Total lateral local recurrence was a hypothetical value of future risk of lateral local recurrence when lateral lymph node dissection was never performed. Results Overall, total lateral local recurrences were observed in 67 patients (8.3%). In the multivariate analyses, the strongest risk factor for total local recurrences was no …

Assessing hard X-ray photoelectron spectroscopy as a new evaluation method for studying protein adsorption on anisotropic hydroxyapatite ceramics model

Authors

Erika Onuma,Tappei Nishihara,Atsushi Ogura,Mamoru Aizawa

Journal

Journal of the Ceramic Society of Japan

Published Date

2024/1/1

Despite the growing interest in hard X-ray photoelectron spectroscopy (HAXPES) due to its deeper probing depth and potential for investigating bulk properties, studies exploring its application for understanding the interface between biomaterials and biological substances (such as proteins) remain limited. The adsorption abilities of proteins on hydroxyapatite (HAp) ceramics with preferred orientation to the a-plane (aHAp), together HAp ceramics without an anisotropic structure (iHAp) were evaluated using two complementary methods: Bradford-based quantification of adsorbed proteins and HAXPES-based analysis of their chemical binding states. aHAp had a significantly higher amount of adsorbed bovine serum albumin (BSA), normalized for a specific surface area, than iHAp from commercially-available HAp powder. The integrated intensity of C1s HAXPES spectra of HAp ceramics with and without anisotropic structure before and after BSA adsorption increased after BSA adsorption. This increase in integrated intensity was more significant for aHAp. This increase in integrated intensity was more pronounced for aHAp. Moreover, the C1s spectra of BSA-adsorbed aHAp ceramics attributed chemical information derived from COO and COOH, which are specific to proteins such as BSA, by peak fitting. The finding that aHAp specifically adsorbed BSA corroborated the results obtained from protein quantification. Overall, this study demonstrates the validity of HAXPES as a novel evaluation method for examining protein adsorption on biomaterials, particularly HAp ceramics.

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Authors

Yuta Ito,Ryo Yokogawa,Wei-Chen Wen,Yuji Yamamoto,Takuya Minowa,Atsushi Ogura

Journal

Japanese Journal of Applied Physics

Published Date

2024/2/16

The strain state, optical properties, and band structure of the self-ordered multilayered silicon-germanium (SiGe) nanodots, which are staggered and dot-on-dot alignment and embedded by Si spacer, were evaluated by Raman spectroscopy and low-temperature photoluminescence (PL). These results suggest that the compressive strain applied to the staggered nanodots is smaller than that of the dot-on-dot nanodots, which contributes to the shrinking of the bandgap of the staggered nanodots. Strong PL intensity was observed from the nanodots compared to the single crystalline bulk SiGe due to the carrier confinement and high crystal quality of the nanodots. The stack-controlled nanodots showed a redshift of the PL peaks compared to the bulk SiGe and the effect of strain induced in SiGe nanodots might not be enough to explain this phenomenon. The cause of the redshift was clarified by considering the hetero …

Usefulness of fluorescent ureteral navigation in total pelvic exenteration using a two-team approach for locally recurrent pelvic malignancies-A video vignette.

Authors

Atsushi Ogura,Yuki Murata,Takanori Jinno,Nobuhisa Yoshikawa,Hiroaki Kajiyama,Tomoki Ebata

Journal

Colorectal Disease: the Official Journal of the Association of Coloproctology of Great Britain and Ireland

Published Date

2024/2/7

Usefulness of fluorescent ureteral navigation in total pelvic exenteration using a two-team approach for locally recurrent pelvic malignancies-A video vignette. - Abstract - Europe PMC Sign in | Create an account https://orcid.org Europe PMC Menu About Tools Developers Help Contact us Helpdesk Feedback Twitter Blog Tech blog Developer Forum Europe PMC plus Search life-sciences literature (43,579,664 articles, preprints and more) Search Advanced search Feedback This website requires cookies, and the limited processing of your personal data in order to function. By using the site you are agreeing to this as outlined in our privacy notice and cookie policy. Abstract Full text Usefulness of fluorescent ureteral navigation in total pelvic exenteration using a two-team approach for locally recurrent pelvic malignancies-A video vignette. Ogura A 1 , Murata Y 1 , Jinno T 1 , Yoshikawa N 2 , Kajiyama H 2 , Ebata T 1 …

Stress Relaxation of Extremely-Thin-Body Ge-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect Transistor Along< 100> and< 110> Observed By Oil-Immersion Raman Spectroscopy

Authors

Ryo Yokogawa,Yuiha Maeda,Sho Sugawa,Chia-Tsong Chen,Mitsuru Takenaka,Shinichi Takagi,Atsushi Ogura

Journal

Electrochemical Society Meeting Abstracts 244

Published Date

2023/12/22

Background and purpose Strain techniques and channel materials with high carrier mobility are the principal technology boosters for the realization of high-performance logic devices composed of group IV semiconductors such as silicon (Si). In particular, strain engineering plays an important role in improving the performance of metal-oxide semiconductor field-effect transistors (MOSFETs) from the viewpoint of reducing the effective carrier mass. It is important to evaluate the stress relaxation in group IV semiconductor devices for the optimization of the carrier mobility and the device structure. In this paper, we demonstrated the stress evaluation of extremely-thin-body Ge-on-insulator (ETB GOI) p-type MOSFET along the <110> and <100> longitudinal directions by oil-immersion Raman spectroscopy with the high-numerical-aperture (high-NA) lens to realize precise evaluation of strain states in the Ge …

実験室系硬 X 線光電子分光法の展開

Authors

西原達平, 小椋厚志

Journal

クリーンテクノロジー= Clean technology: クリーン環境と清浄化技術の専門誌/クリーンテクノロジー編集部 編

Published Date

2023

クリーンテクノロジー= Clean technology: クリーン環境と清浄化技術の専門誌/クリーンテクノロジー編集部 編 33 (6), 6-9, 2023-06

Analysis of InGaAs/InP pIn Photodiode Failed by Electrostatic Discharge

Authors

Yuta Ito,Ryo Yokogawa,Osamu Ueda,Naomi Sawamoto,Koki Ide,Longxiang Men,Atsushi Ogura

Journal

Journal of Electronic Materials

Published Date

2023/8

We have evaluated InGaAs/InP PIN (p-I-n) photodiodes failed by electrostatic discharge (ESD) with forward or reverse biasing, using scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), energy dispersive x-ray spectrometry (EDX), Raman spectroscopy, and photoluminescence (PL) imaging. First, localized traces and bumps were observed on the surface of the Au electrode by SEM. Next, by cross-sectional STEM observation, a heavily damaged region including a void was observed in the p+-InP layer and an upper part of the n−-InGaAs layer just below the bump on the Au electrode. Cross-sectional EDX mapping indicated that the damaged region consists of a mixture of InP and InGaAs, i.e., InGaAsP quaternary material. In addition, poor crystal quality of the active PIN region was also revealed by Raman spectroscopy and PL imaging. Furthermore, although similar results …

Zr-Doped In2O3 Film for the Interlayer of Perovskite/Crystalline Silicon Tandem Solar Cells

Authors

Tappei Nishihara,Hyunju Lee,Ryuji Kaneko,Yoshio Ohshita,Atsushi Wakamiya,Atsushi Masuda,Atsushi Ogura

Published Date

2023/6/11

The potential of Zr-doped In2O3 (IZrO) as a transparent conductive oxide film for the interlayer in perovskite/Si tandem solar cells, one of the structure expected to exceed the theoretical conversion efficiency of crystalline Si solar cells, is investigated. From optical simulations, the optimal film thickness for the intermediate layer was calculated to be 20 nm. The fabricated IZrO successfully achieved a transmittance over 95% and a carrier mobility over 20 cm2/Vs. Furthermore, the formation of oxygen vacancies in IZrO by annealing was suppressed with Zr doping.

Antitumor Effects of Deep Ultraviolet Irradiation for Pancreatic Cancer

Authors

Kimitoshi Yamazaki,Toshio Kokuryo,Junpei Yamaguchi,Masaki Sunagawa,Atsushi Ogura,Nobuyuki Watanabe,Shunsuke Onoe,Kazushi Miyata,Takashi Mizuno,Kay Uehara,Tsuyoshi Igami,Yukihiro Yokoyama,Tomoki Ebata,Masato Nagino

Journal

Anticancer Research

Published Date

2023/2/1

Background/Aim Deep ultraviolet (DUV) light spans within the 250 nm to 350 nm invisible wavelength range. Although it strongly damages various cells, the efficacy of DUV irradiation on pancreatic cancer cells has never been clarified. The purpose of this study was to reveal the antitumor effects of DUV irradiation on pancreatic cancer cells. Materials and Methods Human pancreatic cancer cell lines were eradicated with DUV or ultraviolet A (UVA) for 5 s. Several angiogenesis-related proteins were studied in cancer cells after DUV irradiation using a protein antibody array. A subcutaneous xenograft model was established by inoculation of pancreatic cancer cells into mice. Tumors in this model were irradiated with DUV or UVA once or twice for two weeks. Tumor volumes in these groups (DUV×1: one irradiation, DUV×2: two irradiations, and untreated) were analyzed one week after the second irradiation. Results …

Strain distributions in carbon-doped silicon nanowires along [110] and [100] investigated by X-ray diffraction

Authors

Ichiro Hirosawa,Kazutoshi Yoshioka,Ryo Yokogawa,Takeshi Watanabe,Atsushi Ogura

Journal

Japanese Journal of Applied Physics

Published Date

2023/12/18

Carbon-doped Si films formed on Si substrates have a large tensile strain, and the strain is relaxed by microfabrication into nanowires. We investigated the effects of crystalline orientation, width and carbon concentration on lattice relaxation using reciprocal space mapping (RSM) with X-ray diffraction. RSM profiles of 400–480 periodically aligned C-doped Si nanowires on Si substrates indicate that lattice relaxation of Si 0.9917 C 0.0083 nanowires along the [100] direction was larger than that of [110] nanowires. The effect of crystalline orientation of nanowires is considered to increase as lattice mismatch to the substrate increases, since no difference was observed in residual strains between [100] and [110] Si 0.9940 C 0.0060 nanowires with a smaller lattice mismatch to the Si substrate. It has also been revealed that the strains of C-doped Si nanowires became more relaxed as the nanowire width decreased.

Current status of transanal total mesorectal excision for rectal cancer and the expanding indications of the transanal approach for extended pelvic surgeries

Authors

Kay Uehara,Atsushi Ogura,Yuki Murata,Masanori Sando,Toshiki Mukai,Toshisada Aiba,Takeshi Yamamura,Masanao Nakamura

Published Date

2023/1

Transanal total mesorectal excision (taTME) has been rapidly accepted as a promising surgical approach to the distal rectum. The benefits include ease of access to the bottom of the deep pelvis linearly over a short distance in order to easily visualize the important anatomy. Furthermore, the distal resection margins can be secured under direct vision. Additionally, a two‐team approach combining taTME with a transabdominal approach could decrease the operative time and conversion rate. Although taTME was expected to become more rapidly popularized worldwide, enthusiasm for it has stalled due to unfamiliar intraoperative complications, a lack of oncologic evidence from randomized trials, and the widespread use of robotic surgery. While international registries have reported favorable short‐ and medium‐term outcomes from taTME, a Norwegian national study reported a high local recurrence rate of 9.5 …

Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film

Authors

M Chino,R Yokogawa,A Ogura,H Uchiyama,H Tatsuoka,Y Shimura

Journal

Journal of Electronic Materials

Published Date

2023/8

Thermoelectric conversion devices based on group IV semiconductor elements can improve conversion efficiency by reducing the thermal conductivity of the material. In particular, it is known that introducing Sn into the system can dramatically reduce the conductivity. It has been experimentally shown that the thermal conductivity of polycrystalline Ge and polycrystalline Si1−xGex can be reduced by introduction of Sn. However, there is no experimental report on the effect of Sn atoms on the phonons responsible for thermal conduction. In this study, we investigated the mechanism of thermal conductivity reduction due to the introduction of Sn by inelastic x-ray scattering measurements on a Ge1−xSnx single-crystalline thin film with 9% Sn composition. The phonon dispersion of Ge1−xSnx was obtained as a result of the measurements, and the slope of the acoustic mode in the phonon dispersion curve of Ge1−xSnx …

Evaluation of Process Damage to Crystalline Silicon by Transparent Conductive Oxide Film Deposition

Authors

Haruki Kojima,Tappei Nishihara,Yuta Ito,Hyunju Lee,Kazuhiro Gotoh,Noritaka Usami,Tomohiko Hara,Kyotaro Nakamura,Yoshio Ohsita,Atsushi Ogura

Published Date

2023/6/11

We evaluated the damage to crystalline silicon (c-Si) induced by transparent conductive oxide film (TCO) deposition processes in indium tin oxide (ITO)/ hydrogenated amorphous silicon (a-Si:H)/Si structure. ITO was deposited by reactive plasma deposition (RPD) and sputtering techniques, respectively. After ITO deposition, the post-annealing at 200°C for 30 min in the air atmosphere was also carried out. Carrier lifetime of both samples decreases drastically after ITO deposition, and is significantly recovered by post-annealing both for RPD and sputtering. The plasma processes should produce recombination active defects on the sample surface or in the c-Si substrate resulting in carrier lifetime deterioration. These defects might be relatively small scale. Photoluminescence (PL) spectroscopy revealed the formation of so-called “irradiation-induced defects” that are formed typically after electron beam and ion …

Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films

Authors

H Kojima,T Nishihara,K Gotoh,N Usami,T Hara,K Nakamura,Y Ohshita,A Ogura

Journal

ECS Journal of Solid State Science and Technology

Published Date

2023/1/31

We evaluated damage to crystalline silicon (c-Si) induced by plasma enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon (a-Si: H). The damaged layer+-on the c-Si surface under the a-Si: H film was evaluated by lifetime measurements using the photoconductance method in conjunction with step etching. This damaged layer is approximately 2.8 nm and did not disappear by annealing at 200 C for 30 min in the air atmosphere. The image from cross-sectional transmission electron microscope (TEM) observation also shows an area of contrast on the c-Si surface approximately 2.8 nm thick, which appears to be a damaged layer. Photoluminescence (PL) measurements revealed that this damage is a non-luminescent defect. We verified that the difference in H 2 flow rate during the a-Si: H deposition has an effect on the depth of the damage penetration into the c-Si. We concluded that the …

Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon-Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion …

Authors

Yuiha Maeda,Ryo Yokogawa,Sho Sugawa,Chia-Tsong Chen,Kasidit Toprasertpong,Mitsuru Takenaka,Shinichi Takagi,Atsushi Ogura

Journal

ECS Transactions

Published Date

2023/9/29

We evaluated the anisotropic biaxial strain in the channel region of extremely-thin body silicon-germanium-on-insulator p-MOSFETs by oil-immersion Raman spectroscopy. Oil-immersion Raman spectroscopy can measure the transverse optical (TO) phonon mode which cannot be detected by conventional Raman spectroscopy under the backscattering configuration for (001) substrate. Therefore, we can calculate the anisotropic biaxial stress in the SiGe channel region and investigate the channel width dependence of stress. From the Raman spectra obtained in the polarization configurations of longitudinal optical (LO)-active and TO-active, we confirmed that compressive stress is induced in the SiGe channel region. In addition, we observed that the strain state of the SiGe channel region becomes quasi-uniaxial strain by narrowing the channel width.

Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition

Authors

K Cho,N Sawamoto,H Machida,M Ishikawa,H Sudoh,H Wakabayashi,R Yokogawa,Atusi Ogura

Journal

Japanese Journal of Applied Physics

Published Date

2023/5/5

Large area multi-layer WS 2 film has high potential as a channel material for MOSFETs in next-generation LSIs. State-of-the-art LSIs have complex three-dimensional (3D) structures such as vertical channels and multi-layer stacked channels surrounded by gate electrodes. To develop such structures, it is desirable to fabricate channel layers by CVD, which is suitable for conformal deposition along a substrate with a complicated 3D structure. In this study, we report on WS 2 films deposited by Metal-Organic CVD using low-toxicity n-BuNC-W (CO) 5 as a liquid tungsten precursor and (tC 4 H 9) 2 S 2 for sulfur precursor. The deposited films have a roughly stoichiometric composition and are stable even after 60 d of shelf time in air atmosphere. A layered film along the 3D fin substrate parallel to the surface was fabricated on the entire structure.

See List of Professors in Atsushi Ogura University(Meiji University)

Atsushi Ogura FAQs

What is Atsushi Ogura's h-index at Meiji University?

The h-index of Atsushi Ogura has been 20 since 2020 and 35 in total.

What are Atsushi Ogura's top articles?

The articles with the titles of

Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain …

Standardization of laparoscopic pelvic exenteration; usefulness of lateral-first approach using the umbilical ligament as a reliable surgical landmark-A Video Vignette.

Prediction model of the risk for lateral local recurrence in locally advanced rectal cancer without enlarged lateral lymph nodes: Lessons from a Japanese multicenter pooled …

Assessing hard X-ray photoelectron spectroscopy as a new evaluation method for studying protein adsorption on anisotropic hydroxyapatite ceramics model

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Usefulness of fluorescent ureteral navigation in total pelvic exenteration using a two-team approach for locally recurrent pelvic malignancies-A video vignette.

...

are the top articles of Atsushi Ogura at Meiji University.

What is Atsushi Ogura's total number of citations?

Atsushi Ogura has 6,537 citations in total.

What are the co-authors of Atsushi Ogura?

The co-authors of Atsushi Ogura are Uedono Akira, Takumi Ohashi.

    Co-Authors

    H-index: 45
    Uedono Akira

    Uedono Akira

    University of Tsukuba

    H-index: 11
    Takumi Ohashi

    Takumi Ohashi

    Tokyo Institute of Technology

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