ProfessorsProfessors of Leibniz Universität HannoverAndreas Fissel

Andreas Fissel

Leibniz Universität Hannover

H-index: 33

Europe-Germany

About Andreas Fissel

Andreas Fissel, With an exceptional h-index of 33 and a recent h-index of 9 (since 2020), a distinguished researcher at Leibniz Universität Hannover, specializes in the field of Molecular beam epitaxy, Silicon Carbide, Rare earth oxides, surface science.

His recent articles reflect a diverse array of research interests and contributions to the field:

Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films

Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles

Interfacial layer formation during the growth of Gd2O3 on Si (001) and its thermal stability

Formation of self-assembled Gd₂O₃ nanowire-like structures during epitaxial growth on Si(001)

Tuning of structural and dielectric properties of Gd₂O₃ grown on Si (001)

Andreas Fissel Information

University	Leibniz Universität Hannover
Position	Institute of Electronic Materials and
Citations(all)	3811
Citations(since 2020)	435
Cited By	3473
hIndex(all)	33
hIndex(since 2020)	9
i10Index(all)	89
i10Index(since 2020)	9
Email	Access Email
University Profile Page	Leibniz Universität Hannover
Google Scholar	View Google Scholar Profile

Andreas Fissel Skills & Research Interests

Molecular beam epitaxy

Silicon Carbide

Rare earth oxides

surface science

Top articles of Andreas Fissel

Title	Journal	Author(s)	Publication Date
Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films	ACS Applied Optical Materials	Kritika Ghosh A Fissel HJ Osten Ayan Roy Chaudhuri	2024/1/10
Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles	ACS Applied Nano Materials	Kritika Ghosh Avijit Dhara Sajal Dhara Andreas Fissel Hans-Jörg Osten ...	2022/6/22
Interfacial layer formation during the growth of Gd2O3 on Si (001) and its thermal stability	Semiconductor Science and Technology	Philipp Gribisch Andreas Fissel	2021/10/19
Formation of self-assembled Gd₂O₃ nanowire-like structures during epitaxial growth on Si(001)	RSC Advances	Philipp Gribisch Andreas Fissel	2021
Tuning of structural and dielectric properties of Gd₂O₃ grown on Si (001)	Journal of Applied Physics	P Gribisch A Fissel	2020/8/7