陈冰 Bing Chen

About 陈冰 Bing Chen

陈冰 Bing Chen, With an exceptional h-index of 30 and a recent h-index of 21 (since 2020), a distinguished researcher at Zhejiang University, specializes in the field of Microelectronics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

Design-technology co-optimizations (DTCO) for general-purpose computing in-memory based on 55nm NOR flash technology

Observation and characterization of recoverable fatigue process under low-electric field (< 1.8 MV/cm) in HfZrO ferroelectric film

105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications

MRAM acceleration core for vector matrix multiplication and XNOR-binarized neural network inference

Implementation of data search in multi-level NAND flash memory by complementary storage scheme

A novel bi-functional memory-PUF module utilizing adjustable switching window of RRAM

陈冰 Bing Chen Information

University

Position

___

Citations(all)

3318

Citations(since 2020)

1862

Cited By

2221

hIndex(all)

30

hIndex(since 2020)

21

i10Index(all)

59

i10Index(since 2020)

40

Email

University Profile Page

Google Scholar

陈冰 Bing Chen Skills & Research Interests

Microelectronics

Top articles of 陈冰 Bing Chen

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

IEEE Transactions on Electron Devices

2022/7/20

HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

IEEE Electron Device Letters

2021/12/16

Design-technology co-optimizations (DTCO) for general-purpose computing in-memory based on 55nm NOR flash technology

2021/12/11

Observation and characterization of recoverable fatigue process under low-electric field (< 1.8 MV/cm) in HfZrO ferroelectric film

IEEE Electron Device Letters

2021/7/5

MRAM acceleration core for vector matrix multiplication and XNOR-binarized neural network inference

2020/8/10

Implementation of data search in multi-level NAND flash memory by complementary storage scheme

IEEE Electron Device Letters

2020/6/25

A novel bi-functional memory-PUF module utilizing adjustable switching window of RRAM

2020/4/6

Systematic study of medium states in spin-transfer torque magnetoresistance random access memory and their implication for the bit error rate

IEEE Electron Device Letters

2020/2/24

See List of Professors in 陈冰 Bing Chen University(Zhejiang University)

Co-Authors

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