You Seung Rim
Sejong University
H-index: 33
Asia-South Korea
Top articles of You Seung Rim
Title | Journal | Author(s) | Publication Date |
---|---|---|---|
Gallium oxide as an electron transport, a window, an UV and a hole blocking layer for high performance perovskite solar cell: a simulation study | Optical and Quantum Electronics | Sarra Barkat Afak Meftah Madani Labed Widad Laiadi Maroua Abdallaoui | 2024/2 |
Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications | Advanced Electronic Materials | Tan Hoang Vu Nguyen Mohammad Tauquir Alam Shamim Shaikh Ho Jung Jeon Thi Thanh Huong Vu Chowdam Venkata Prasad | 2024/1/23 |
Trap-assisted tunneling in type II Ag2O/β-Ga2O3 self-powered solar blind photodetector | Sensors and Actuators A: Physical | Madani Labed Kihwan Kim Kyung Hwan Kim Jeongsoo Hong You Seung Rim | 2024/7/1 |
Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability | Materials Today Physics | Chowdam Venkata Prasad Madani Labed Jang Hyeok Park Kyong Jae Kim You Seung Rim | 2024/1/1 |
Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes | ACS nano | Madani Labed Bo-In Park Jekyung Kim Jang Hyeok Park Ji Young Min | 2024/2/9 |
Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient | Advanced Science | Mohammad Tauquir Alam Shamim Shaikh Tan Hoang Vu Nguyen Ho Jung Jeon Chowdam Venkata Prasad Kyong Jae Kim | 2024/1 |
Liquid–Solid Interface Engineering of Ultrathin and Solution-Processed Indium Oxide-Based Electrolyte-Gated Transistors by Gallium Doping | ACS Applied Electronic Materials | Joon Hui Park You Seung Rim | 2024/2/1 |
Recent advances in rolling 2D TMDs nanosheets into 1D TMDs nanotubes/nanoscrolls | Sikandar Aftab Muhammad Zahir Iqbal You Seung Rim | 2023/1 | |
Device engineering of p-CuAlO2/β-Ga2O3 interface: a staggered-gap band-alignment | Materials Today Advances | Chowdam Venkata Prasad Madani Labed Mohammad Tauquir Alam Shamim Shaikh Ji Young Min Tan Hoang Vu Nguyen | 2023/8/1 |
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode | Materials Today Physics | Chowdam Venkata Prasad Joon Hui Park Ji Young Min Wonjin Song Madani Labed | 2023/1/1 |
Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes | Journal of Semiconductors | Madani Labed Ji Young Min Amina Ben Slim Nouredine Sengouga Chowdam Venkata Prasad | 2023/7/1 |
On the nature of majority and minority traps in β-Ga2O3: A review | Materials Today Physics | Labed Madani Sengouga Nouredine Chowdam Venkata Prasad Henini Mohamed You Seung Rim | 2023/6/24 |
Ga2O3-based X-ray detector and scintillators: A Review | Materials Today Physics | Chowdam Venkata Prasad Madani Labed Mohammad Tauquir Alam Shamim Shaikh Ji Young Min Tan Hoang Vu Nguyen | 2023/4/25 |
Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction | Applied Physics Letters | Madani Labed Saud Alotaibi Ji Young Min Abdulaziz Almalki Mohamed Henini | 2023/12/18 |
Study of a Solar-Blind Photodetector Based on an IZTO/β-Ga2O3/ITO Schottky Diode | Journal of Electronic Materials | Rima Cherroun Afak Meftah Madani Labed Nouredine Sengouga Amjad Meftah | 2023/2 |
Assessment of trapping layer control in IGZO/Al2O3/Ga2O3 synaptic transistor for neuromorphic computing | Materials Today Physics | Eun Seo Jo You Seung Rim | 2023/9/1 |
Bandgap modulation and electrical characteristics of (AlxGa1− x) 2O3/4H-SiC thin film heterostructures | Thin Solid Films | Hee-Jae Lee Myeong-Cheol Shin Soo-Young Moon Dong-Wook Byun Min-Yeong Kim | 2022/7/31 |
Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector | Nanomaterials | Madani Labed Hojoong Kim Joon Hui Park Mohamed Labed Afak Meftah | 2022/3/24 |
Schottky diode and method for fabricating the same | 2022/7/14 | ||
Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer | Nanomaterials | Madani Labed Nouredine Sengouga You Seung Rim | 2022/3/1 |