Yoram Dagan

Yoram Dagan

Tel Aviv University

H-index: 31

Asia-Israel

About Yoram Dagan

Yoram Dagan, With an exceptional h-index of 31 and a recent h-index of 17 (since 2020), a distinguished researcher at Tel Aviv University, specializes in the field of Condensed matter physics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Enhanced Nonlinear Response by Manipulating the Dirac Point at the (111) Interface

Enhanced Superconductivity in SrTiO-based Interfaces via Amorphous Al2O3 Capping

Two-component nematic superconductivity in 4Hb-TaS2

Concomitant appearance of conductivity and superconductivity in (111) interface with metal capping

Tunable magnetic scattering and ferroelectric switching at the interface

Heterostructure system and method of fabricating the same

Link between superconductivity and a Lifshitz transition in intercalated

Spin-Excitations of 1T-TaS2 and Related Magnetoresistance in the 4Hb Phase

Yoram Dagan Information

University

Position

Professor of Physics

Citations(all)

3543

Citations(since 2020)

1060

Cited By

2988

hIndex(all)

31

hIndex(since 2020)

17

i10Index(all)

51

i10Index(since 2020)

28

Email

University Profile Page

Tel Aviv University

Google Scholar

View Google Scholar Profile

Yoram Dagan Skills & Research Interests

Condensed matter physics

Top articles of Yoram Dagan

Title

Journal

Author(s)

Publication Date

Enhanced Nonlinear Response by Manipulating the Dirac Point at the (111) Interface

Physical Review Letters

G Tuvia

A Burshtein

I Silber

A Aharony

O Entin-Wohlman

...

2024/4/3

Enhanced Superconductivity in SrTiO-based Interfaces via Amorphous Al2O3 Capping

arXiv preprint arXiv:2402.14051

I Silber

A Azulay

A Basha

D Ketchker

M Baskin

...

2024/2/21

Two-component nematic superconductivity in 4Hb-TaS2

Nature Communications

I Silber

S Mathimalar

I Mangel

AK Nayak

O Green

...

2024/1/27

Concomitant appearance of conductivity and superconductivity in (111) interface with metal capping

Physical Review Materials

RS Bisht

Michael Mograbi

PK Rout

Gal Tuvia

Y Dagan

...

2022/4/11

Tunable magnetic scattering and ferroelectric switching at the interface

Physical Review Materials

Gal Tuvia

Sapir Weitz Sobelman

Shay Sandik

Beena Kalisky

Yoram Dagan

2022/7/26

Heterostructure system and method of fabricating the same

2021/7/13

Link between superconductivity and a Lifshitz transition in intercalated

Physical Review B

A Almoalem

I Silber

S Sandik

M Lotem

A Ribak

...

2021/5/26

Spin-Excitations of 1T-TaS2 and Related Magnetoresistance in the 4Hb Phase

APS March Meeting Abstracts

Itai Silber

Itamar Kimchi

David Graf

Amit Kanigel

Yoram Dagan

2021

Chiral superconductivity in the alternate stacking compound 4Hb-TaS2

Science advances

A Ribak

R Majlin Skiff

M Mograbi

PK Rout

MH Fischer

...

2020/3/27

Ferroelectric Control of Normal and Superconducting States in Oxide Interface by Intrinsic and Extrinsic Bias

Bulletin of the American Physical Society

Gal Tuvia

Yiftach Frenkel

Prasanna Rout

Itai Silber

Beena Kalisky

...

2020/3/3

Quantum spin-liquid and chiral superconductivity in TaS2

Bulletin of the American Physical Society

Amit Kanigel

Amit Ribak

Mark Fischer

Jonathan Ruhman

Yoram Dagan

2020/3/2

Probing Spin-Excitaions above the Ground State of 1T-TaS2

Bulletin of the American Physical Society

Itai Silber

Itamar Kimchi

David Graf

Amit Kanigel

Yoram Dagan

2020/3/2

Ferroelectric exchange bias affects interfacial electronic states

Advanced Materials

Gal Tuvia

Yiftach Frenkel

Prasanna K Rout

Itai Silber

Beena Kalisky

...

2020/7

See List of Professors in Yoram Dagan University(Tel Aviv University)

Co-Authors

H-index: 98
R. L. Greene

R. L. Greene

University of Maryland, Baltimore

H-index: 58
Guy Deutscher

Guy Deutscher

Tel Aviv University

H-index: 49
Ulrich (Uli) Zeitler

Ulrich (Uli) Zeitler

Radboud Universiteit

H-index: 47
David Graf

David Graf

Florida State University

H-index: 45
Ralph Krupke

Ralph Krupke

Karlsruher Institut für Technologie

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