ProfessorsProfessors of New York UniversityYizhang Chen

Yizhang Chen

New York University

H-index: 6

North America-United States

About Yizhang Chen

Yizhang Chen, With an exceptional h-index of 6 and a recent h-index of 6 (since 2020), a distinguished researcher at New York University, specializes in the field of Spintronics, Spin Seebeck Effect, Magnetism, Magnetoresistance.

His recent articles reflect a diverse array of research interests and contributions to the field:

A quantum material spintronic resonator

Thermal effects in spin-torque switching of perpendicular magnetic tunnel junctions at cryogenic temperatures

Reduced exchange interactions in thin perpendicularly magnetized magnetic tunnel junction free layers and spin-transfer reversal mechanisms

A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory

Yizhang Chen Information

University	New York University
Position	PhD
Citations(all)	137
Citations(since 2020)	124
Cited By	51
hIndex(all)	6
hIndex(since 2020)	6
i10Index(all)	5
i10Index(since 2020)	5
Email	Access Email
University Profile Page	New York University
Google Scholar	View Google Scholar Profile

Yizhang Chen Skills & Research Interests

Spintronics

Spin Seebeck Effect

Magnetism

Magnetoresistance

Top articles of Yizhang Chen

Title	Journal	Author(s)	Publication Date
A quantum material spintronic resonator	Scientific Reports	Jun-Wen Xu Yizhang Chen Nicolás M Vargas Pavel Salev Pavel N Lapa ...	2021/7/23
Thermal effects in spin-torque switching of perpendicular magnetic tunnel junctions at cryogenic temperatures	Physical Review Applied	Laura Rehm Georg Wolf Bartek Kardasz Egecan Cogulu Yizhang Chen ...	2021/3/30
Reduced exchange interactions in thin perpendicularly magnetized magnetic tunnel junction free layers and spin-transfer reversal mechanisms	Bulletin of the American Physical Society	Jamileh Beik Mohammadi Bartek Kardasz Georg Wolf Yizhang Chen Mustafa Pinarbasi ...	2020/3/2
A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory	Applied Physics Letters	Lili Lang Yujie Jiang Fei Lu Cailu Wang Yizhang Chen ...	2020/1/13