Yasuto Hijikata
Saitama University
H-index: 22
Asia-Japan
Top articles of Yasuto Hijikata
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
SiC Thermal Oxidation Process and MOS Interface Characterizations: From Carrier Transportation to Single-Photon Source | Yasuto Hijikata Yu-ichiro Matsushita Takeshi Ohshima | 2023/5/31 | |
Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments | Bulletin of the American Physical Society | Kyle Miller | 2014/10/18 |
Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment | Applied Physics Express | Tetta Suzuki Yuichi Yamazaki Takashi Taniguchi Kenji Watanabe Yusuke Nishiya | 2023/3/27 |
The Influence of Oxygen‐Related Defects on the Formation of In2O3‐Based Low‐Fluorescence Transparent Conducting Film | physica status solidi (a) | Maki Shimizu Masataka Shugo Shun Mori Yasuto Hijikata Shinya Aikawa | 2023/6 |
Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations | Applied Physics Letters | Yuichi Yamazaki Yoji Chiba Shin-ichiro Sato Takahiro Makino Naoto Yamada | 2021/1/11 |
Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces | Applied Physics Letters | Yasuto Hijikata Shota Komori Shunsuke Otojima Yu-Ichiro Matsushita Takeshi Ohshima | 2021/5/17 |
Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide | Applied Physics Express | Takuma Narahara Shin-ichiro Sato Kazutoshi Kojima Yasuto Hijikata Takeshi Ohshima | 2021/1/28 |
Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes | Materials Science Forum | Yuichi Yamazaki Yoji Chiba Shin Ichiro Sato Takahiro Makino Naoto Yamada | 2020/8/28 |
Development of an extreme environment resistive CCD using silicon carbide | Impact | Yasuto Hijikata | 2020/4/15 |
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | Ivana Capan Tomislav Brodar Yuichi Yamazaki Yuya Oki Takeshi Ohshima | 2020/9/1 |
Enhancement of ODMR contrasts of silicon vacancy in SiC by thermal treatment | Materials Science Forum | Yoji Chiba Yuichi Yamazaki Shin Ichiro Sato Takahiro Makino Naoto Yamada | 2020/8/28 |
Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC | Materials Science Forum | Takuma Narahara Shin Ichiro Sato Kazutoshi Kojima Yuichi Yamazaki Yasuto Hijikata | 2020/8/28 |
Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles | Materials Science Forum | Shin Ichiro Sato Takuma Narahara Shinobu Onoda Yuichi Yamazaki Yasuto Hijikata | 2020/8/28 |
