Wilman Tsai
Stanford University
H-index: 41
North America-United States
Top articles of Wilman Tsai
Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors
Nano Letters
2024/4/30
Wilman Tsai
H-Index: 17
Vivek Thampy
H-Index: 14
On-Device Continual Learning With STT-Assisted-SOT MRAM Based In-Memory Computing
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
2024/2/28
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
ACS Applied Materials & Interfaces
2023/10/19
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films
Solid-State Electronics
2023/10/1
2-Terminal, High Density, and Magnetic Field Free SOT-MRAM
2023/7/31
Fen Xue
H-Index: 6
Wilman Tsai
H-Index: 17
Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N
Nature communications
2023/7/4
First Observation of Ultra-high Polarization (~ 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes
2023/6/11
Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors
Advanced Electronic Materials
2023/6
Cerium-doped ferroelectric materials and related devices and methods
2023/5/25
Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
Nature Materials
2023/5
Energy efficient computing with high-density, field-free STT-assisted SOT-MRAM (SAS-MRAM)
IEEE Transactions on Magnetics
2022/12/1
Nanocrystallite seeding of metastable ferroelectric phase formation in atomic layer-deposited Hafnia–Zirconia alloys
ACS Applied Materials & Interfaces
2022
CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
Advanced Electronic Materials
2022/7
Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators
2022/5/15
CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications
2022/4/18
Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co] n multilayer
Applied Physics Letters
2021/1/25
High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with …
2021/12/11
Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer
APL Materials
2021/10/1
Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder
Matter
2021/5/5
Xiang Li
H-Index: 19
Peng Li
H-Index: 6
Fen Xue
H-Index: 6
Di Yi
H-Index: 18
Chong Bi
H-Index: 14
Wilman Tsai
H-Index: 17
Ultrahigh Spin-Orbit Torque Efficiency at Spin Reorientation Transition State in Pt/Co Multilayer
2021/4/19
