William Alan Doolittle
Georgia Institute of Technology
H-index: 33
North America-United States
Top articles of William Alan Doolittle
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions | Journal of Applied Physics | Keisuke Motoki Zachary Engel Timothy M McCrone Huijin Chung Christopher M Matthews | 2024/4/7 |
Cathodoluminescence investigation of defect states in n-and p-type AlN | Applied Physics Letters | Christopher M Matthews Habib Ahmad Kamal Hussain MVS Chandrashekhar Asif Khan | 2024/1/29 |
Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis | Applied Physics Letters | W Alan Doolittle Christopher M Matthews Habib Ahmad Keisuke Motoki Sangho Lee | 2023/8/14 |
Dynamical memristive neural networks and associative self-learning architectures using biomimetic devices | Frontiers in Neuroscience | Bill Zivasatienraj W Alan Doolittle | 2023/4/20 |
Kinetic Model for Ternary III-Nitride Epitaxy: The Role of Vertical Segregation on Phase Separation | Crystal Growth & Design | Christopher M Matthews Zachary Engel Keisuke Motoki W Alan Doolittle | 2023/10/31 |
Millimeter wave thin-film bulk acoustic resonator in sputtered scandium aluminum nitride | Sinwoo Cho Omar Barrera Pietro Simeoni Ellie Y Wang Jack Kramer | 2024/1/21 | |
Structural study of active layer lithium niobium (III) oxide-LiNbO2 memristors | APS March Meeting Abstracts | Sara Mohamed Sebastian Howard Egor Evlyukhin Galo Paez Fajardo Matthew Wahila | 2022 |
System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux | 2022/5/3 | ||
Observation of interfacial strain relaxation and electron beam damage thresholds in Al0. 3In0. 7N/GaN heterostructures by transmission electron microscopy | Journal of Vacuum Science & Technology B | Keisuke Motoki Zachary Engel Christopher M Matthews Habib Ahmad Timothy M McCrone | 2022/9/1 |
GaN: Be I-Layer-Based High-Power pin Diodes Achieving Large Quasi-Vertical MBE Breakdown Performance | IEEE Transactions on Electron Devices | Habib Ahmad Zachary Engel Aheli Ghosh Christopher M Matthews W Alan Doolittle | 2022/3/16 |
An experimentally validated, universal memristor model enabling temporal neuromorphic computation | Bill Zivasatienraj W Alan Doolittle | 2022/6/26 | |
Creative Epitaxy: Finding Ways to Violate Assumptions that Breach Material Barriers | William Alan Doolittle | 2022/1/11 | |
Stable and high performance algan self-aligned-gate field emitter arrays | IEEE Electron Device Letters | Pao-Chuan Shih Girish Rughoobur Zachary Engel Habib Ahmad William Alan Doolittle | 2022/6/21 |
Ion intercalation enabled tunable frequency response in lithium niobite memristors | IEEE Transactions on Electron Devices | Aheli Ghosh Alex S Weidenbach Bill Zivasatienraj Timothy M McCrone W Alan Doolittle | 2022/12/19 |
Wet-based digital etching on GaN and AlGaN | Applied Physics Letters | Pao-Chuan Shih Zachary Engel Habib Ahmad William Alan Doolittle Tomás Palacios | 2022/1/10 |
Extreme and deep ultraviolet photovoltaic cell | 2022/5/26 | ||
Raman spectroscopy of lithium niobite (LiNbO2) | Chemical Physics Letters | SA Howard E Evlyukhin S Abdel Razek GJ Paez Fajardo MJ Wahila | 2022/11/16 |
Upper limits to thermal conductance across gallium nitride interfaces: Predictions and measurements | David H Olson Ashutosh Giri John A Tomko John T Gaskins Habib Ahmad | 2022/1/1 | |
Realization of homojunction PN AlN diodes | Journal of Applied Physics | Habib Ahmad Zachary Engel Christopher M Matthews Sangho Lee W Alan Doolittle | 2022/5/7 |
Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures | Journal of Applied Physics | Zachary Engel Keisuke Motoki Christopher M Matthews W Alan Doolittle | 2022/11/14 |
