Wenjuan Zhu
University of Illinois at Urbana-Champaign
H-index: 38
North America-United States
Top articles of Wenjuan Zhu
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating | Applied Physics Letters | Zijing Zhao Junzhe Kang Shaloo Rakheja Wenjuan Zhu | 2024/2/12 |
Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With 140-nm Gate Length | IEEE Transactions on Electron Devices | Ahmad E Islam Nicholas P Sepelak Adam T Miesle Hanwool Lee Michael Snure | 2024/1/24 |
Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing | ACS nano | Zijing Zhao Junzhe Kang Ashwin Tunga Hojoon Ryu Ankit Shukla | 2024/1/17 |
Stable High Temperature Operation of p-GaN Gate HEMT With Etch-stop Layer | IEEE Electron Device Letters | Hanwool Lee Hojoon Ryu Junzhe Kang Wenjuan Zhu | 2024/1/10 |
Strong Damping-Like Torques in Wafer-Scale MoTe Grown by MOCVD | arXiv preprint arXiv:2404.19135 | Stasiu Thomas Chyczewski Hanwool Lee Shuchen Li Marwan Eladl Jun-Fei Zheng | 2024/4/29 |
High temperature operation of p-GaN/AlGaN/GaN based devices | APS March Meeting Abstracts | Hanwool Lee Hojoon Ryu Wenjuan Zhu | 2023 |
High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500° C using SiO2/SiNx/Al2O3 gate stacks | Applied Physics Letters | Junzhe Kang Kai Xu Hanwool Lee Souvik Bhattacharya Zijing Zhao | 2023/2/20 |
-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics | Zhongjie Ren Hsien-Chih Huang Hanwool Lee Clarence Chan Henry C Roberts | 2023/6/25 | |
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO | ACS Applied Materials & Interfaces | Hojoon Ryu Junzhe Kang Minseong Park Byungjoon Bae Zijing Zhao | 2023/11/10 |
Nanoelectronics Based on Ferroelectric and van der Waals Materials—In Memory of Prof. TP Ma | Wenjuan Zhu | 2023 | |
Correction: Probing antiferromagnetism in exfoliated Fe 3 GeTe 2 using magneto-transport measurements | Nanoscale | Stasiu T Chyczewski Ji Shi Hanwool Lee Paolo F Ferrari Kai Xu | 2023 |
Reconfigurable transistors based on van der Waals heterostructures | MRS Advances | Junzhe Kang Shaloo Rakheja Wenjuan Zhu | 2023/10 |
2D Piezoelectrics, pyroelectrics, and ferroelectrics | Journal of Applied Physics | Wenjuan Zhu Xia Hong Peide D Ye Yi Gu | 2023/3/28 |
Probing antiferromagnetism in exfoliated Fe 3 GeTe 2 using magneto-transport measurements | Nanoscale | Stasiu T Chyczewski Ji Shi Hanwool Lee Paolo F Furlanetto Kai Xu | 2023 |
Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation | Applied Physics Letters | Hanwool Lee Hojoon Ryu Wenjuan Zhu | 2023/3/13 |
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices | arXiv preprint arXiv:2309.08746 | Zijing Zhao Shaloo Rakheja Wenjuan Zhu | 2023/9/15 |
Anomalous Hall Effect in 2D Fe3GeTe2/Heavy Metal Heterostructures | APS March Meeting Abstracts | Stasiu Chyczewski Ji Shi Kai Xu Wenjuan Zhu | 2023 |
High temperature operation of E-mode and D-mode AlGaN/GaN MIS-HEMTs with recessed gates | IEEE Journal of the Electron Devices Society | Hanwool Lee Hojoon Ryu Junzhe Kang Wenjuan Zhu | 2023/3/7 |
High-Temperature Electronics Using Ga203 FETs and AIGaN/GaN HEMTs | Ahmad E Islam Matt Grupen Gary Hughes Andreas Popp Nicholas P Sepelak | 2023/8/28 | |
Reconfigurable Logic Transistors Based on 2D Heterostructures | APS March Meeting Abstracts | Junzhe Kang Shaloo Rakheja Wenjuan Zhu | 2023 |
