Wanjun Chen
University of Electronic Science and Technology of China
H-index: 29
Asia-China
Top articles of Wanjun Chen
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation | Applied Physics Letters | Xinghuan Chen Zhiyuan He Yijun Shi Zeheng Wang Fangzhou Wang | 2024/4/22 |
Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition | IEEE Transactions on Electron Devices | Chao Liu Pengcheng Xing Shuyi Zhang Wanjun Chen Ruize Sun | 2023/1/6 |
On the Abnormal Reduction and Recovery of Dynamic RON under UIS Stress in Schottky p-GaN Gate HEMTs | IEEE Transactions on Power Electronics | Chao Liu Xinghuan Chen Ruize Sun Jingxue Lai Wanjun Chen | 2023/5/16 |
A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor | IEEE Transactions on Electron Devices | Chao Liu Yijun Shi Zhiyuan He Zongqi Cai Xu Huang | 2023/12/12 |
Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology | Crystals | Yujian Zhang Guojian Ding Fangzhou Wang Ping Yu Qi Feng | 2023/5/13 |
The ESD Behavior of D-Mode GaN MIS-HEMT | IEEE Transactions on Electron Devices | Chao Liu Yijun Shi Zhiyuan He Yajie Xin Wanjun Chen | 2023/10/20 |
A comparative study on G-to-S ESD robustness of the ohmic-gate and Schottky-gate p-GaN HEMTs | IEEE Transactions on Electron Devices | Yijun Shi Zhiyuan He Yun Huang Zongqi Cai Yiqiang Chen | 2023/3/21 |
A Novel Insulated Gate Trigger Thyristor Integrated with Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching | IEEE Electron Device Letters | Chao Liu Pengwei Zhou Wanjun Chen Pengcheng Xing Yijun Shi | 2023/8/15 |
Numerical analysis of an ultralow switching loss IGBT with an inner primary blocking junction | IEEE Transactions on Electron Devices | Yun Xia Wanjun Chen Chao Liu Ruize Sun Xiaorui Xu | 2023/2/3 |
A Novel Solid-state Circuit Breaker with Robust Breaking Capability and High Efficiency | IEEE Transactions on Power Electronics | Chao Liu Yuxiao Yang Wanjun Chen Xiaorui Xu Zekun Zhou | 2023/7/17 |
Reverse blocking gallium nitride high electron mobility transistor | 2023/2/2 | ||
A Novel IGBT with Variable Conductance Path Realizing Both Low and Turn-off Loss | Yuxiao Yang Wanjun Chen Xinqi Sun Xiaorui Xu Yun Xia | 2023/5/28 | |
Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress | IEEE Transactions on Electron Devices | Xiaoming Wang Wanjun Chen Ruize Sun Chao Liu Xinghuan Chen | 2023/12/28 |
A low-loss diode integrated SiC trench MOSFET for improving switching performance | IEEE Transactions on Electron Devices | Jiawei Ding Xiaochuan Deng Songjun Li Hao Wu Xu Li | 2022/10/5 |
A Novel Full Tun-on Reverse-Conducting IGBT with Enhanced Carrier Concentration Modulation in Collector Side | Chao Liu Guoyun Wu Meng Wei Xiaorui Xu Pengcheng Xing | 2022/10/25 | |
Reverse blocking p-GaN gate HEMTs with multicolumn p-GaN/Schottky alternate-island drain | IEEE Electron Device Letters | Ruize Sun Pan Luo Fangzhou Wang Chao Liu Wenjun Xu | 2022/4/8 |
Experimentally Demonstrating Fast Neutron Irradiation Effect on High-di/dt Switching Characteristics of Insulated Gate Triggered Thyristor for Pulse Power | Chao Liu Chao Yang Wanjun Chen Ruize Sun Xiaorui Xu | 2022/5/22 | |
An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode | IEEE Transactions on Electron Devices | Fangzhou Wang Zeheng Wang Wanjun Chen Ruize Sun Wenjun Xu | 2022/9/20 |
A Low Loss Trench IGBT with Variable Doping Layer in P-base for Improving Turn-off Capability | Pengcheng Xing Yuxiao Yang Xiaorui Xu Chao Liu Ruize Sun | 2022/10/25 | |
Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs | IEEE Electron Device Letters | Yajie Xin Wanjun Chen Ruize Sun Fangzhou Wang Chao Liu | 2022/12/7 |
Co-Authors
