Vitalii Sichkovskyi

Vitalii Sichkovskyi

Universität Kassel

H-index: 13

Europe-Germany

About Vitalii Sichkovskyi

Vitalii Sichkovskyi, With an exceptional h-index of 13 and a recent h-index of 10 (since 2020), a distinguished researcher at Universität Kassel, specializes in the field of Quantum Dot Lasers, Molecular Beam Epitaxy, Optoelectronics.

His recent articles reflect a diverse array of research interests and contributions to the field:

High-resolution X-ray diffraction to probe quantum dot asymmetry

InP-based quantum dot lasers emitting at 1.3 µm

High-gain InP-based quantum dot lasers emitting at 1.3 μm

High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths

Emission characteristics and temperature stability of InP-based quantum-dot lasers emitting at 1.3 µm

1.5-µm Indium Phosphide-based Quantum Dot Lasers and Optical Amplifiers

InP-based quantum dot laser

1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices

Vitalii Sichkovskyi Information

University

Position

Institute of Nanostructure Technologies and Analytics

Citations(all)

553

Citations(since 2020)

331

Cited By

377

hIndex(all)

13

hIndex(since 2020)

10

i10Index(all)

21

i10Index(since 2020)

11

Email

University Profile Page

Universität Kassel

Google Scholar

View Google Scholar Profile

Vitalii Sichkovskyi Skills & Research Interests

Quantum Dot Lasers

Molecular Beam Epitaxy

Optoelectronics

Top articles of Vitalii Sichkovskyi

Title

Journal

Author(s)

Publication Date

High-resolution X-ray diffraction to probe quantum dot asymmetry

Measurement

J Serafińczuk

W Rudno-Rudziński

M Gawełczyk

P Podemski

K Parzyszek

...

2023/11/15

InP-based quantum dot lasers emitting at 1.3 µm

Journal of Crystal Growth

Vinayakrishna Joshi

Sven Bauer

Vitalii Sichkovskyi

Florian Schnabel

Johann P Reithmaier

2023/9/15

High-gain InP-based quantum dot lasers emitting at 1.3 μm

V Joshi

S Bauer

V Sichkovskyi

K Fuchs

JP Reithmaier

2022/6/1

High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths

Semiconductor Science and Technology

Ramasubramanian Balasubramanian

Vitalii Sichkovskyi

Cedric Corley-Wiciak

Florian Schnabel

Larisa Popilevsky

...

2022/4/1

Emission characteristics and temperature stability of InP-based quantum-dot lasers emitting at 1.3 µm

Vinayakrishna Joshi

Sven Bauer

Vitalii Sichkovskyi

Florian Schnabel

Anna Sengül

...

2022/3/9

1.5-µm Indium Phosphide-based Quantum Dot Lasers and Optical Amplifiers

Sven Bauer

Vitalii Sichkovskyi

Ori Eyal

Tali Septon

Annette Becker

...

2022/3/6

InP-based quantum dot laser

Vinayakrishna Joshi

Sven Bauer

Vitalii Sichkovskyi

Florian Schnabel

Johann Peter Reithmaier

2022/10/16

1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices

IEEE Nanotechnology Magazine

Sven Bauer

Vitalii Sichkovskyi

Ori Eyal

Tali Septon

Annette Becker

...

2021/1/27

Quantum-dot based vertical external-cavity surface-emitting lasers with high efficiency

IEEE Photonics Technology Letters

Tanja Finke

Vitalii Sichkovskyi

Johann Peter Reithmaier

2021/6/14

Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers

Optics express

Tanja Finke

Jacob Nürnberg

Vitalii Sichkovskyi

Matthias Golling

Ursula Keller

...

2020/7/6

On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells

Sven Bauer

Vitalii Sichkovskyi

Florian Schnabel

Anna Sengül

Johann Peter Reithmaier

...

2020/2/24

See List of Professors in Vitalii Sichkovskyi University(Universität Kassel)