Vikram Kumar

About Vikram Kumar

Vikram Kumar, With an exceptional h-index of 36 and a recent h-index of 15 (since 2020), a distinguished researcher at Indian Institute of Technology Delhi, specializes in the field of semiconductor device physics, silicon, compound semiconductors, nanotechnology.

His recent articles reflect a diverse array of research interests and contributions to the field:

Transient analysis of growth/decay in materials utilizing a digital exponential peeling method

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Non Destructive Evaluation of AlGaN/GaN HEMT structure by cathodoluminescence spectroscopy

Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors

Influence of the parameters of the donor layer on the characteristics of N-AlGaAs/InGaAs/GaAs P-HEMTs

Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range

Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field

Vikram Kumar Information

University

Position

Honorary Professor

Citations(all)

5651

Citations(since 2020)

1106

Cited By

4887

hIndex(all)

36

hIndex(since 2020)

15

i10Index(all)

114

i10Index(since 2020)

25

Email

University Profile Page

Indian Institute of Technology Delhi

Google Scholar

View Google Scholar Profile

Vikram Kumar Skills & Research Interests

semiconductor device physics

silicon

compound semiconductors

nanotechnology

Top articles of Vikram Kumar

Title

Journal

Author(s)

Publication Date

Transient analysis of growth/decay in materials utilizing a digital exponential peeling method

Authorea Preprints

Jayjit Mukherjee

Amit Malik

Seema Vinayak

Vikram Kumar

DS Rawal

...

2023/8/29

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

ACS Applied Electronic Materials

Hardhyan Sheoran

Vikram Kumar

Rajendra Singh

2022/6/6

Non Destructive Evaluation of AlGaN/GaN HEMT structure by cathodoluminescence spectroscopy

Journal of Luminescence

Anshu Goyal

Brajesh S Yadav

R Raman

Anand Kumar

Sandeep Dalal

...

2021/4/1

Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors

ACS Applied Electronic Materials

Wasi Uddin

Veerendra Dhyani

Gufran Ahmad

Vikram Kumar

Pranaba K Muduli

...

2020/5/21

Influence of the parameters of the donor layer on the characteristics of N-AlGaAs/InGaAs/GaAs P-HEMTs

VG Mokerov

DV Amelin

AV Hook

VE Kaminsky

Yu V Fedorov

...

2020/10/28

Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range

Nanotechnology

John Wellington John

Veerendra Dhyani

Sarmistha Maity

Subhrajit Mukherjee

Samit K Ray

...

2020/8/19

Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field

Semiconductor Science and Technology

Shradha Gupta

JK Kaushik

Ankur Gupta

Vikram Kumar

VR Balakrishnan

2020/7/17

See List of Professors in Vikram Kumar University(Indian Institute of Technology Delhi)

Co-Authors

H-index: 21
Yashowanta N Mohapatra

Yashowanta N Mohapatra

Indian Institute of Technology Kanpur

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