Valeriya Kilchytska

Valeriya Kilchytska

Université Catholique de Louvain

H-index: 29

Europe-Belgium

About Valeriya Kilchytska

Valeriya Kilchytska, With an exceptional h-index of 29 and a recent h-index of 17 (since 2020), a distinguished researcher at Université Catholique de Louvain,

His recent articles reflect a diverse array of research interests and contributions to the field:

Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs

Variance and Skewness of Current Fluctuations Experimentally Evidenced in Single-Photon Avalanche Diodes

Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack

Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs

Improved self-heating extraction with RF technique at cryogenic temperatures

Impact of High Temperature Up to 175 C on the DC and RF Performances of 22-nm FD-SOI MOSFETs

Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors

22 nm FD-SOI MOSFET figures of merit at high temperatures upto 175° C

Valeriya Kilchytska Information

University

Position

___

Citations(all)

3299

Citations(since 2020)

1113

Cited By

2655

hIndex(all)

29

hIndex(since 2020)

17

i10Index(all)

91

i10Index(since 2020)

42

Email

University Profile Page

Université Catholique de Louvain

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Top articles of Valeriya Kilchytska

Title

Journal

Author(s)

Publication Date

Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs

Solid-State Electronics

Martin Vanbrabant

Jean-Pierre Raskin

Denis Flandre

Valeriya Kilchytska

2023/4/1

Variance and Skewness of Current Fluctuations Experimentally Evidenced in Single-Photon Avalanche Diodes

Léopold Van Brandt

Roselien Vercauteren

Diego Haya Enriquez

Nicolas André

Valeriya Kilchytska

...

2023/10/17

Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack

Solid-State Electronics

Yiyi Yan

Valeriya Kilchytska

Denis Flandre

Jean-Pierre Raskin

2023/9/1

Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs

Solid-State Electronics

Arka Halder

Lucas Nyssens

Dimitri Lederer

Valeriya Kilchytska

Jean-Pierre Raskin

2023/9/1

Improved self-heating extraction with RF technique at cryogenic temperatures

Solid-State Electronics

Martin Vanbrabant

Jean-Pierre Raskin

Valeriya Kilchytska

2023/9/1

Impact of High Temperature Up to 175 C on the DC and RF Performances of 22-nm FD-SOI MOSFETs

IEEE Transactions on Electron Devices

Arka Halder

Lucas Nyssens

Martin Vanbrabant

Martin Rack

Dimitri Lederer

...

2023/8/15

Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors

Microelectronic Engineering

Yiyi Yan

Valeriya Kilchytska

Bin Wang

Sébastien Faniel

Yun Zeng

...

2022/2/1

22 nm FD-SOI MOSFET figures of merit at high temperatures upto 175° C

Arka Halder

Lucas Nyssens

Martin Rack

Dimitri Lederer

Valeriya Kilchytska

...

2022/1/16

Experimental study of thermal coupling effects in FD-SOI MOSFET

Solid-State Electronics

Martin Vanbrabant

Jean-Pierre Raskin

Denis Flandre

Valeriya Kilchytska

2022/8/1

Hexagonal Boron Nitride Memristor Based on a Nanogap Self-Formed by Silicidation

Yiyi Yan

Nicolas Reckinger

Valeriya Kilchytska

Denis Flandre

Xiaohui Tang

...

2022

Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method

Solid-State Electronics

Yiyi Yan

Valeriya Kilchytska

Denis Flandre

Jean-Pierre Raskin

2022/8/1

Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing

Solid-State Electronics

Sedki Amor

Valeriya Kilchytska

Fares Tounsi

Nicolas André

M Machhout

...

2022/8/1

Back-gate lumped resistance effect on AC characteristics of FD-SOI MOSFET

IEEE Microwave and Wireless Components Letters

Martin Vanbrabant

Lucas Nyssens

Valeriya Kilchytska

Jean-Pierre Raskin

2022/4/8

Trap recovery by in-situ annealing in fully-depleted MOSFET with active silicide resistor

IEEE Electron Device Letters

Sedki Amor

Valeriya Kilchytska

Denis Flandre

Philippe Galy

2021/5/11

Extensive electrical characterization methodology of advanced MOSFETs towards analog and RF applications

Valeriya Kilchytska

Sergej Makovejev

Babak Kazemi Esfeh

Lucas Nyssens

Arka Halder

...

2021/2/8

Back-Gate Network Extraction Free from Dynamic Self-Heating in FD SOI

Lucas Nyssens

Martin Rack

Arka Halder

Martin Vanbrabant

Valeriya Kilchytska

...

2021/4/19

A physical model of contact resistance in Ti-contacted graphene-based field effect transistors

IEEE Transactions on Electron Devices

Bin Wang

Mohammad Wasil Malik

Yiyi Yan

Valeriya Kilchytska

Yun Zeng

...

2021/1/8

Assessment of RF compact modelling of FD SOI transistors

Martin Vanbrabant

Lucas Nyssens

Valeriya Kilchytska

Jean-Pierre Raskin

2021/4/19

Advanced MOSFETs Electrical Characterization for Further Analog and RF applications

Valeriya Kilchytska

Sergei Makovejev

Babak Kazemi Esfeh

Lucas Nyssens

Arka Halder

...

2021

Determination of Carrier Lifetime in Silicon Using an Ultra-thin Al2O3/SiO2 Dielectric Stack

Yiyi Yan

Denis Flandre

Valeriya Kilchytska

Sébastien Faniel

Xiaohui Tang

...

2021/4/19

See List of Professors in Valeriya Kilchytska University(Université Catholique de Louvain)