Toshikazu Nishida

Toshikazu Nishida

University of Florida

H-index: 52

North America-United States

About Toshikazu Nishida

Toshikazu Nishida, With an exceptional h-index of 52 and a recent h-index of 25 (since 2020), a distinguished researcher at University of Florida,

His recent articles reflect a diverse array of research interests and contributions to the field:

Methods and apparatuses for hollow and multi-material stereolithography

Automated Phase and Orientation Mapping of Multiphase, Polycrystalline Hafnia-Zirconia Thin Films Using 4D-STEM

A Comparison of Relative Seebeck Coefficients for Screen Printed Flexible Thermocouples Using Commercially Available Conductive Inks

3D printing of hollow geometries using blocking liquid substitution stereolithography

Ferroelectricity and thermal retention through in situ hydrogen plasma treatment of doped hafnium oxide

Hafnium-zirconium oxide (HZO) ferroelectric transducer and method of making the same

Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors

High-resolution stereolithography using a static liquid constrained interface

Toshikazu Nishida Information

University

Position

___

Citations(all)

9801

Citations(since 2020)

2795

Cited By

7974

hIndex(all)

52

hIndex(since 2020)

25

i10Index(all)

129

i10Index(since 2020)

68

Email

University Profile Page

Google Scholar

Top articles of Toshikazu Nishida

Methods and apparatuses for hollow and multi-material stereolithography

2023/8/17

Automated Phase and Orientation Mapping of Multiphase, Polycrystalline Hafnia-Zirconia Thin Films Using 4D-STEM

2023/8/1

A Comparison of Relative Seebeck Coefficients for Screen Printed Flexible Thermocouples Using Commercially Available Conductive Inks

2023/7/9

3D printing of hollow geometries using blocking liquid substitution stereolithography

Scientific Reports

2023/1/9

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Ferroelectricity and thermal retention through in situ hydrogen plasma treatment of doped hafnium oxide

2022/8/23

Hafnium-zirconium oxide (HZO) ferroelectric transducer and method of making the same

2022/7/19

Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors

Journal of Applied Physics

2021/9/7

Paul Chojecki
Paul Chojecki

H-Index: 1

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

High-resolution stereolithography using a static liquid constrained interface

Communications Materials

2021/4/9

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Fabrication and non-destructive characterization of through-plastic-via (TPV) in flexible hybrid electronics

Flexible and Printed Electronics

2021/3/25

Kartik Sondhi
Kartik Sondhi

H-Index: 6

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Thermal retention of atomic layer deposited Hf0. 5Zr0. 52 films using H2O and O2–H2 plasma oxidation methods

Applied Physics Letters

2021/1/18

Paul Chojecki
Paul Chojecki

H-Index: 1

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Microfluidic paper-based analytical device for histidine determination

Applied Biochemistry and Biotechnology

2020/11

Xiao Jiang
Xiao Jiang

H-Index: 8

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Three-dimensional fabrication at inert immiscible liquid interface

2020/10/15

Multi-material microstereolithography using injection of resin

2020/9/3

Data retention and low voltage operation of Al2O3/Hf0. 5Zr0. 5O2 based ferroelectric tunnel junctions

Nanotechnology

2020/7/10

Effect of a Backing Material on the Bendability of Flexible Substrates with Passive SMD components

2020/6/3

Kartik Sondhi
Kartik Sondhi

H-Index: 6

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Screen-printed inductive silver ink strain sensor on stretchable tpu substrate

2020/6/3

Kartik Sondhi
Kartik Sondhi

H-Index: 6

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator

Applied Physics Letters

2020/1/27

Effect of forming gas furnace annealing on the ferroelectricity and wake-up effect of Hf0. 5Zr0. 5O2 thin films

ECS Journal of Solid State Science and Technology

2020/1/24

Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

Applied Physics Letters

2020/1/21

Aniruddh Shekhawat
Aniruddh Shekhawat

H-Index: 5

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

A High- 30nm-Thick MFM Resonator Using Ferroelectric Hafnium Zirconium Oxide

2020/1/18

Toshikazu Nishida
Toshikazu Nishida

H-Index: 27

Roozbeh Tabrizian
Roozbeh Tabrizian

H-Index: 13

See List of Professors in Toshikazu Nishida University(University of Florida)