Tomás González
Universidad de Salamanca
H-index: 35
Europe-Spain
Top articles of Tomás González
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime | IEEE Transactions on Microwave Theory and Techniques | Philippe Artillan Ignacio Íñiguez-de-la-Torre Gaudencio Paz-Martínez Edouard Rochefeuille Sergio García-Sánchez | 2024/4/29 |
Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion | Journal of Applied Physics | E Pérez-Martín T González I Iñiguez-de-la-Torre J Mateos | 2024/1/28 |
Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes | Journal of Applied Physics | B Orfao Mahmoud Abou Daher RA Peña BG Vasallo S Pérez | 2024/1/7 |
A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters | IEEE Transactions on Microwave Theory and Techniques | Gaudencio Paz-Martínez Philippe Artillan Javier Mateos Edouard Rochefeuille Tomás González | 2024 |
On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes | IEEE Transactions on Electron Devices | S García-Sánchez M Abou Daher M Lesecq Lili Huo R Lingaparthi | 2023/5/10 |
Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels | H Sánchez-Martín I Íñiguez-de-la-Torre J Mateos S Pérez T González | 2023/11/8 | |
Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size | I Íñiguez-de-la-Torre Philippe Artillan Gaudencio Paz-Martínez Edouard Rochefeuille T González | 2023/11/8 | |
A Deep Learning-Monte Carlo combined prediction of side-effect impact ionization in highly doped GaN diodes | IEEE Transactions on Electron Devices | S García-Sánchez R Rengel S Pérez T González J Mateos | 2023/4/18 |
Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes | Applied Physics Letters | I Íñiguez-de-la-Torre E Pérez-Martín P Artillan E Rochefeuille H Sánchez-Martín | 2023/9/18 |
Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions | Applied Physics Express | Tomás González Beatriz Orfao Susana Pérez Javier Mateos Beatriz G Vasallo | 2023/2/17 |
Low temperature memory effects in AlGaN/GaN nanochannels | Applied Physics Letters | H Sánchez-Martín E Pérez-Martín G Paz-Martínez J Mateos T González | 2023/9/4 |
Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range | IEEE Transactions on Microwave Theory and Techniques | Gaudencio Paz-Martínez Ignacio Íñiguez-de-la-Torre Héctor Sánchez-Martín Tomás González Javier Mateos | 2023/1/30 |
Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature | Nanotechnology | E Pérez-Martín H Sánchez-Martín T González J Mateos I Íñiguez-de-la-Torre | 2023/5/24 |
High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime | IEEE Transactions on Microwave Theory and Techniques | Gaudencio Paz-Martínez Ignacio Íñiguez-de-la-Torre Philippe Artillan Héctor Sánchez-Martín Sergio García-Sánchez | 2023/11/23 |
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors | Journal of Applied Physics | G Paz-Martínez I Íñiguez-De-La-Torre H Sánchez-Martín B García-Vasallo Nicolas Wichmann | 2022/10/7 |
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples | Journal of Applied Physics | B Orfao G Di Gioia BG Vasallo S Pérez J Mateos | 2022/7/28 |
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs | Solid-State Electronics | H Sánchez-Martín I Íñiguez-de-la-Torre S García-Sánchez J Mateos T González | 2022/7/1 |
Temperature and gate-length dependence of subthreshold RF detection in GaN HEMTs | Sensors | Gaudencio Paz-Martínez Ignacio Íñiguez-De-La-Torre Héctor Sánchez-Martín José Antonio Novoa-López Virginie Hoel | 2022/2/15 |
Terahertz electronic devices | Frédéric Aniel Gregory Auton David Cumming Michael Feiginov Sebastian Gebert | 2022/11/11 | |
Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations | Beatriz Orfao BG Vasallo Diego Moro-Melgar Mohammed Zaknoune Giuseppe Di Gioia | 2021/6/9 |
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