Tien Sheng Chao
National Chiao Tung University
H-index: 34
Asia-Taiwan
Top articles of Tien Sheng Chao
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel | IEEE Transactions on Electron Devices | Yan-Kui Liang Jun-Yang Zheng Yu-Lon Lin Yu-Cheng Lu Dong-Ru Hsieh | 2024/4/10 |
Large Memory Window Antifuse HfO-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 C Retention | IEEE Transactions on Electron Devices | Dong-Ru Hsieh Jia-Chian Ni Wei-Ju Yeh Zi-Yang Hong Huai-En Luo | 2024/2/22 |
Antiferroelectric Hf0. 25Zr0. 75O2With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition | IEEE Transactions on Electron Devices | Kun Tao Lin Chieh Lo Shu Chieh Chang Hsing Tzu Tsai Tien Sheng Chao | 2024/2/1 |
Investigation on Germanium Transistors with HfOx-Based Gate Stacks for CMOS Operations | ECS Journal of Solid State Science and Technology | Tzu-Chieh Hong Chun-Jung Su Yao-Jen Lee Yiming Li Seiji Samukawa | 2024/1/30 |
Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques | IEEE Transactions on Electron Devices | Tzu-Chieh Hong Wen-Hsiang Lu Yeong-Her Wang Jiun-Yun Li Yao-Jen Lee | 2023/2/27 |
Optimization of Ferroelectricity in Al-Doped HfO2 Capacitors: Electrical and Endurance Characteristics | Dong-Ru Hsieh Huai-En Luo Jia-Chian Ni Zi-Yang Hong Yi-Hsiu Chen | 2023/6/11 | |
Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics | IEEE Electron Device Letters | Yan-Kui Liang Wei-Li Li Jun-Yang Zheng Yu-Lon Lin Yu-Cheng Lu | 2023/8/31 |
Ti supersaturated Si by microwave annealing processes | Javier Olea Ariza Germán González Díaz David Pastor Pastor Eric García Hemme Daniel Caudevilla Gutiérrez | 2023/2/1 | |
Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics | Dong-Ru Hsieh Jia-Chian Ni Wei-Ju Yeh Tzu-Chieh Hong Zi-Yang Hong | 2023/6/11 | |
Single‐Gate In‐Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching | Advanced Materials | Ching‐Hung Chen Yu‐Ting Lai Ciao‐Fen Chen Pei‐Tzu Wu Kuan‐Jung Su | 2023/8 |
A high thermal stability ohmic contact for GaN-based devices | Nanoscale Advances | Chia-Yi Wu Tien-Sheng Chao Yi-Chia Chou | 2023 |
Corrections to “Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal” | IEEE Electron Device Letters | Yao-Jen Lee Fu-Kuo Hsueh Michael I Current Ching-Yi Wu Tien-Sheng Chao | 2023/5/23 |
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” | Yao-Jen Lee Ta-Chun Cho Shang-Shiun Chuang Fu-Kuo Hsueh Yu-Lun Lu | 2023/6/21 | |
Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfZrO FETs With NH Plasma Treatment | IEEE Transactions on Electron Devices | Dong-Ru Hsieh Chia-Chin Lee Tzu-Chieh Hong Wei-Ju Yeh Tien-Sheng Chao | 2023/5/19 |
Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High … | Yan-Kui Liang June-Yang Zheng Yu-Lon Lin Wei-Li Li Yu-Cheng Lu | 2023/6/11 | |
Fabrication of Bilayer Stacked Antiferroelectric/Ferroelectric HfxZr1-xO2 FeRAM and FeFET with Improved Leakage Current and Robust Reliability by Modifying … | IEEE Electron Device Letters | Chieh Lo Shu-Chieh Chang Kun-Tao Lin Chung-Kuang Chen Chen-Feng Chang | 2023/4/18 |
Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2 FETs With NH3 Plasma Treatment Featuring High Footprint Current | Dong-Ru Hsieh Chia-Chin Lee Tien-Sheng Chao | 2023/6/11 | |
First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics | Yan-Kui Liang Jun-Yang Zheng Yu-Lon Lin Yu Chen Kuan-Lun Chen | 2023/12/9 | |
Role of Nitrogen in Ferroelectricity of HfxZr1-xO2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal Structure | IEEE Transactions on Electron Devices | Dong-Ru Hsieh Chia-Chin Lee Tien-Sheng Chao | 2022/3/4 |
A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology | IEEE Electron Device Letters | Cheng-Hung Hsieh Tzu-Chieh Hong Chiung-Yi Yang Yi-Ho Chen Xin-Ren Yu | 2022/9/14 |
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