Takuya Hoshii
Tokyo Institute of Technology
H-index: 19
Asia-Japan
Top articles of Takuya Hoshii
Identification of compressive strain in thin ferroelectric Al1-x Sc x N films by Raman spectroscopy
Japanese Journal of Applied Physics
2024/2/29
Takuya Hoshii
H-Index: 10
Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement
Japanese Journal of Applied Physics
2024/2/22
Takuya Hoshii
H-Index: 10
Thickness-Dependent Flat-Band Voltage of Ferroelectric Al0.7Sc0.3n Films on SiO2/Si Substrate
Electrochemical Society Meeting Abstracts 243
2023/8/28
Takuya Hoshii
H-Index: 10
(Invited) Extraction of Trap Level in GaN Hemt from Transient Current upon Back Gate Voltage Application
Electrochemical Society Meeting Abstracts 243
2023/8/28
Takuya Hoshii
H-Index: 10
A Ferroelectric Property Tailoring Method of Al0.7Sc0.3n Films by Sputter-Deposition Pressure
Electrochemical Society Meeting Abstracts 243
2023/8/28
Takuya Hoshii
H-Index: 10
Fabrication and Characterization of Self-Aligned WSe2 p-Type Field-Effect Transistor
Electrochemical Society Meeting Abstracts 243
2023/8/28
Iriya Muneta
H-Index: 12
Takuya Hoshii
H-Index: 10
Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
Journal of Applied Physics
2023/6/14
Takuya Hoshii
H-Index: 10
Charge trap evaluation method and semiconductor element
2023/5/16
Influence of sputtering power on the switching and reliability of ferroelectric Al0. 7Sc0. 3N films
Japanese Journal of Applied Physics
2022/4/1
Takuya Hoshii
H-Index: 10
Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs
Japanese Journal of Applied Physics
2022/2/7
Iriya Muneta
H-Index: 12
Takuya Hoshii
H-Index: 10
Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement
Japanese Journal of Applied Physics
2022/2/3
Takuya Hoshii
H-Index: 10
Edward Y Chang
H-Index: 36
Method for evaluating electrical defect density of semiconductor layer, and semiconductor element
2022/11/29
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten …
IEEE Journal of the Electron Devices Society
2022/11/24
Iriya Muneta
H-Index: 12
Takuya Hoshii
H-Index: 10
Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination
Applied Physics Express
2022/11/9
Takuya Hoshii
H-Index: 10
Edward Y Chang
H-Index: 36
(Invited, Digital Presentation) Low Voltage Operation of CMOS Inverter Based on WSe2 n/p FETs
Electrochemical Society Meeting Abstracts 242
2022/10/9
Iriya Muneta
H-Index: 12
Takuya Hoshii
H-Index: 10
A Carbon Nanotube Binding Bis (pyrenylstyryl) Bodipy-C60 Nano Tweezer: Formation and Photoinduced Charge Separation in Supramolecular C60-Bodipy-SWCNT Triads
Angewandte Chemie (International ed. in English)
2022/10/26
A Gradual Change in Al1-XScX N Ferroelectric Film upon Switching Reversal
Electrochemical Society Meeting Abstracts 241
2022/7/7
Takuya Hoshii
H-Index: 10
(Digital Presentation) CeOx Capping for Ferroelectric Y:HfO2 Films
Electrochemical Society Meeting Abstracts 241
2022/7/7
Takuya Hoshii
H-Index: 10
Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate
Japanese Journal of Applied Physics
2022/6/13
GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
Japanese Journal of Applied Physics
2022/6/13
Takuya Hoshii
H-Index: 10
Co-Authors
