Tahsin Faraz

About Tahsin Faraz

Tahsin Faraz, With an exceptional h-index of 15 and a recent h-index of 14 (since 2020), a distinguished researcher at Technische Universiteit Eindhoven,

His recent articles reflect a diverse array of research interests and contributions to the field:

Plasma-Enhanced Atomic Layer Deposition of HfO2 with Substrate Biasing: Thin Films for High-Reflective Mirrors

Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3

Area-selective atomic layer deposition of TiN using aromatic inhibitor molecules for metal/dielectric selectivity

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

Etching with atomic-level precision: The emerging field of atomic layer etching

Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Tahsin Faraz Information

University

Position

(TU/e)

Citations(all)

856

Citations(since 2020)

737

Cited By

378

hIndex(all)

15

hIndex(since 2020)

14

i10Index(all)

16

i10Index(since 2020)

15

Email

University Profile Page

Google Scholar

Top articles of Tahsin Faraz

Plasma-Enhanced Atomic Layer Deposition of HfO2 with Substrate Biasing: Thin Films for High-Reflective Mirrors

ACS Applied Materials & Interfaces

2022/3/21

Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3

Applied Physics Letters

2020/10/19

Area-selective atomic layer deposition of TiN using aromatic inhibitor molecules for metal/dielectric selectivity

Chemistry of Materials

2020/8/13

Tahsin Faraz
Tahsin Faraz

H-Index: 8

Marcel A Verheijen
Marcel A Verheijen

H-Index: 43

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

Applied Physics Letters

2020/7/20

Etching with atomic-level precision: The emerging field of atomic layer etching

2020/6/2

Tahsin Faraz
Tahsin Faraz

H-Index: 8

Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure

Plasma Chemistry and Plasma Processing

2020/5

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Nanoscale

2020

See List of Professors in Tahsin Faraz University(Technische Universiteit Eindhoven)

Co-Authors

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