Harm Knoops

About Harm Knoops

Harm Knoops, With an exceptional h-index of 37 and a recent h-index of 29 (since 2020), a distinguished researcher at Technische Universiteit Eindhoven,

His recent articles reflect a diverse array of research interests and contributions to the field:

Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma

Ultrathin superconducting TaCxN1− x films prepared by plasma-enhanced atomic layer deposition with ion-energy control

Isotropic atomic layer etching of GaN using SF6 plasma and Al (CH3) 3

Recent Material Developments for Superconducting Quantum Circuits

Circle fit optimization for resonator quality factor measurements

Isotropic Atomic Layer Etching of TiN by Oxidation to TiO2 and Selective Etching of TiO2 by SF6 and H2 Plasma

(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching

Surface smoothing by atomic layer deposition and etching for the fabrication of nanodevices

Harm Knoops Information

University

Position

___

Citations(all)

4613

Citations(since 2020)

2531

Cited By

3168

hIndex(all)

37

hIndex(since 2020)

29

i10Index(all)

58

i10Index(since 2020)

50

Email

University Profile Page

Google Scholar

Top articles of Harm Knoops

Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma

Journal of Vacuum Science & Technology A

2023/12/1

Haozhe Wang
Haozhe Wang

H-Index: 8

Harm Knoops
Harm Knoops

H-Index: 30

Ultrathin superconducting TaCxN1− x films prepared by plasma-enhanced atomic layer deposition with ion-energy control

Applied Physics Letters

2023/9/25

Marcel A Verheijen
Marcel A Verheijen

H-Index: 43

Harm Knoops
Harm Knoops

H-Index: 30

Isotropic atomic layer etching of GaN using SF6 plasma and Al (CH3) 3

Journal of Applied Physics

2023/8/21

Yi Shu
Yi Shu

H-Index: 16

Harm Knoops
Harm Knoops

H-Index: 30

Recent Material Developments for Superconducting Quantum Circuits

2023

Circle fit optimization for resonator quality factor measurements

APS March Meeting Abstracts

2023

Isotropic Atomic Layer Etching of TiN by Oxidation to TiO2 and Selective Etching of TiO2 by SF6 and H2 Plasma

APS March Meeting Abstracts

2023

Haozhe Wang
Haozhe Wang

H-Index: 8

Harm Knoops
Harm Knoops

H-Index: 30

(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching

Electrochemical Society Meeting Abstracts 244

2023/12/22

Harm Knoops
Harm Knoops

H-Index: 30

Adrie Mackus
Adrie Mackus

H-Index: 21

Surface smoothing by atomic layer deposition and etching for the fabrication of nanodevices

ACS Applied Nano Materials

2022/11/28

Foundations of atomic-level plasma processing in nanoelectronics

Plasma Sources Science and Technology

2022/10/25

Plasma-Enhanced Atomic Layer Deposition of Superconducting Tantalum Carbonitride for Quantum Devices

Journal of Vacuum Science & Technology A

2017/1/1

Innovative remote plasma source for atomic layer deposition for GaN devices

Journal of Vacuum Science & Technology A

2021/12/1

Plasma‐Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer

Advanced Materials Technologies

2021/11

(Invited) Role of Low-Energy Ions during Plasma-Enhanced Atomic Layer Deposition

Electrochemical Society Meeting Abstracts 240

2021/10/19

Karsten Arts
Karsten Arts

H-Index: 5

Harm Knoops
Harm Knoops

H-Index: 30

Surface zeta potential and diamond growth on gallium oxide single crystal

Carbon

2021/8/30

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2

Chemistry of Materials

2021/4/29

Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2

The Journal of Physical Chemistry C

2021/4/8

Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma

The Journal of Physical Chemistry C

2021/2/10

Plasma atomic layer deposition

Atomic layer deposition of nanostructured materials

2011/11/23

Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions

Nanoscale

2021

Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3

Applied Physics Letters

2020/10/19

See List of Professors in Harm Knoops University(Technische Universiteit Eindhoven)