T. Paul Chow
Rensselaer Polytechnic Institute
H-index: 51
North America-United States
Top articles of T. Paul Chow
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors | physica status solidi (a) | Mohamed Torky Yanzhen Zhao Panagiotis Lazos T Paul Chow | 2023/8 |
Demonstration of 3.5 kV SiC Deep-Implanted Superjunction Didoes | Reza Ghandi Collin Hitchcock Stacey Kennerly Mohamed Torky T Paul Chow | 2023/5/28 | |
Scalable ultrahigh voltage SiC superjunction device technologies for power electronics applications | R Ghandi C Hitchcock S Kennerly M Torky TP Chow | 2022/12/3 | |
Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants | Materials Science Forum | Collin Hitchcock Reza Ghandi Peter Deeb Stacey Kennerly Mohamed Torky | 2022/6/30 |
Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment | Materials Science Forum | Joseph A McPherson Andrew A Woodworth T Paul Chow Wei Ji | 2022/6/30 |
Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices | Materials Science Forum | Mohamed Torky T Paul Chow | 2022/6/30 |
Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs | Energy | Yongseok Jeon Dongwoo Kim Jongho Jung Dong Soo Jang Yongchan Kim | 2018/10/15 |
Ion-induced mesoplasma formation and thermal destruction in 4H-SiC power MOSFET devices | IEEE Transactions on Nuclear Science | Joseph A McPherson Collin W Hitchcock T Paul Chow Wei Ji Andrew A Woodworth | 2021/3/23 |
A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes | Materials Science Forum | Collin W Hitchcock Xiang Zhou Gyanesh Pandey Reza Ghandi Alexander Bolotnikov | 2020/8/28 |
Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits | physica status solidi (a) | Zhibo Guo Collin Hitchcock Robert F Karlicek Jr Guanxi Piao Yoshiki Yano | 2020/4 |
Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N2 Annealing with Conductance Measurements | Materials Science Forum | Xiang Zhou Collin W Hitchcock Rajendra P Dahal Gyanesh Pandey Jacob Kupernik | 2020/8/28 |
Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices under Heavy Ion Bombardment | Joseph A McPherson Collin W Hitchcock T Paul Chow Wei Ji Andrew A Woodworth | 2020/12/2 | |
Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT | AIP Advances | Hideyuki Itakura Toshihumi Nomura Naoki Arita Narihito Okada Christian M Wetzel | 2020/2/1 |
Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes | Materials Science Forum | Xiang Zhou Collin W Hitchcock Reza Ghandi Alexander Bolotnikov T Paul Chow | 2020/8/28 |
4.5 kV SiC charge-balanced MOSFETs with ultra-low on-resistance | Reza Ghandi Alexander Bolotnikov Stacey Kennerly Collin Hitchcock Poon-man Tang | 2020/9/13 | |
Mechanisms of heavy ion-induced single event burnout in 4H-SiC power MOSFETs | Materials Science Forum | Joseph A McPherson Collin W Hitchcock T Paul Chow Wei Ji Andrew A Woodworth | 2020/8/28 |
Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs | Materials Science Forum | Xiang Zhou Collin W Hitchcock Poonman Tang I Bhat T Paul Chow | 2020/8/28 |
Degradation of forward current density with increasing blocking voltage in diamond Schottky-pn diodes | Diamond and Related Materials | Collin Hitchcock T Paul Chow | 2020/4/1 |
Common-Drain Bidirectional 1200V SiC MOSFETs | Materials Science Forum | Collin W Hitchcock T Paul Chow | 2020/8/28 |
Performance projection of high-voltage, quasi-lateral diamond MOSFET for power electronics applications | Diamond and Related Materials | Zhibo Guo T Paul Chow | 2020/4/1 |
