Sung Ho Jhang
Konkuk University
H-index: 16
Asia-South Korea
Top articles of Sung Ho Jhang
Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors
Nanomaterials
2022/10/28
Hyun-Jong Chung
H-Index: 20
Sung Ho Jhang
H-Index: 8
Indirect Band Gap in Scrolled MoS2 Monolayers
Nanomaterials
2022/9/26
Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction
Nanomaterials
2022/8/31
Charge Transport in UV-Oxidized Graphene and Its Dependence on the Extent of Oxidation
Nanomaterials
2022/8/18
Indirect Band Gap in Scrolled MoS2 Monolayers. Nanomaterials 2022, 12, 3353
2022
Suspended MoTe2 field effect transistors with ionic liquid gate
Applied Physics Letters
2021/11/29
Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors
Nanotechnology
2021/9/21
Hyun-Jong Chung
H-Index: 20
Sung Ho Jhang
H-Index: 8
Schottky barrier diode based on multilayer MoTe and the gate control of the direction of rectification
Journal of the Korean Physical Society
2021/4
Sung Ho Jhang
H-Index: 8
Semiconductor-less vertical transistor with ION/IOFF of 106
Nature Communications
2021/2/12
Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film
Advanced Electronic Materials
2021/2
Sung Ho Jhang
H-Index: 8
Seungmoon Pyo
H-Index: 15
Large temperature-independent magnetoresistance without gating operation in monolayer graphene
ACS Applied Materials & Interfaces
2020/11/12
Structural configurations and Raman spectra of carbon nanoscrolls
Nanotechnology
2020/5/13
Graphene/hBN vertical transistor: tuning a tunneling barrier height by modulating fermi energy level of graphene
Bulletin of the American Physical Society
2020/3/2
Effect of Al2O3 deposition on carrier mobility and ambient stability of few-layer MoS2 field effect transistors
Current Applied Physics
2020/2/1
Sung Won Kim
H-Index: 2
Sung Ho Jhang
H-Index: 8
