Stoyan Nihtianov
Technische Universiteit Delft
H-index: 26
Europe-Netherlands
Top articles of Stoyan Nihtianov
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Semiconductor detector and method of fabricating same | 2023/12/12 | ||
Semiconductor charged particle detector for microscopy | 2024/3/21 | ||
A detector substrate for use in a charged particle multi-beam assessment tool | 2023/7/27 | ||
An Array of Bandpass Detectors for Measuring Beam Spectral Components | Mojtaba Jahangiri Paolo Sberna Amir Sammak Stoyan Nihtianov | 2023/1/23 | |
Highlights of SIM 2022 [IEEE News] | IEEE Solid-State Circuits Magazine | Stoyan Nihtianov Kofi Makinwa Viola Schaffer Mirjam-Otten Need | 2023/1/23 |
Readout circuit for pixelized electron detector | 2023/6/29 | ||
Low-Offset Band-Pass Signal Shaper with High Time Resolution in 40 nm CMOS Technology | Alireza Mohammad Zaki Stoyan Nihtianov | 2023/10/16 | |
Experimental Qualification of a Low-Noise Charge-Sensitive ROIC with Very High Time Resolution | Alireza Mohammad Zaki Stoyan Nihtianov | 2023/6/19 | |
Design and Qualification of a High-Speed Low-Power Comparator in 40 nm CMOS Technology | Alireza Mohammad Zaki Yutong Du Stoyan Nihtianov | 2023/9/13 | |
Ultra-thin uncooled integrable-on-chip detector to measure wide infrared radiation residue in lithography exposure and metrology inspection tools | Mojtaba Jahangiri Jaroslaw Pawluczyk Karol Dąbrowski Stoyan Nihtianov | 2023/4/27 | |
Characterization Challenges of a Low Noise Charge Detection ROIC | IEEE Transactions on Instrumentation and Measurement | Alireza Mohammad Zaki Stoyan Nihtianov | 2022/3/17 |
Comparative Study of the Resolution of Ge-on-Si Photodetectors for Infrared Signals | Mojtaba Jahangiri Paolo Sberna Amir Sammak Stoyan Nihtianov | 2022/12/9 | |
High Time Resolution, Low-Noise, Power-Efficient, Charge-Sensitive Amplifier in 40 nm Technology | Alireza Mohammad Zaki Stoyan Nihtianov | 2022/9/13 | |
Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions | Journal of Physics Communications | Piet Xiaowen Fang Stoyan Nihtianov Paolo Sberna Gilles A de Wijs Changming Fang | 2022/8/22 |
Lithographic apparatus and device manufacturing method involving a heater | 2009/10/13 | ||
Interfaces between crystalline Si and amorphous B: interfacial interactions and charge barriers | Physical Review B | Piet Xiaowen Fang Stoyan Nihtianov Paolo Sberna Changming Fang | 2021/2/9 |
Mechanism of electronegativity heterojunction of nanometer amorphous-boron on crystalline silicon: an overview | Paolo Sberna Piet X Fang Changming Fang Stoyan Nihtianov | 2021/1/26 | |
A Continuous-Time Readout IC with 0.12 aF/√ Hz for Capacitive Inertial Sensors | Hui Jiang Yang Liu Luke Middelburg Brahim El Mansouri Stoyan Nihtianov | 2021/11/24 | |
Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports,(2017), 7, 1,(13247), 10.1038/s41598-017 … | Scientific Reports | Vahid Mohammadi Stoyan Nihtianov Changming Fang | 2021 |
High-count rate, low power and low noise single electron readout ASIC in 65nm CMOS technology | Matthew Al Disi Alireza Mohammad Zaki Qinwen Fan Stoyan Nihtianov | 2021/9/15 |
Co-Authors
