Srimanta Baishya
National Institute of Technology, Silchar
H-index: 26
Asia-India
Top articles of Srimanta Baishya
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect | Silicon | Suparna Panchanan Reshmi Maity Srimanta Baishya Niladri Pratap Maity | 2024/1 |
An Analytical Approach to Study the Impact of Traps on Ge-Source Double Gate PNPN TFET | IETE Journal of Research | Karabi Baruah Brinda Bhowmick Srimanta Baishya | 2023/6/3 |
Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source | Engineering Research Express | Karabi Baruah Srimanta Baishya | 2023/5/22 |
A Quantitative Comparison Between the Electrical Characteristics of Vertical Super Thin Body (VSTB) FET and Silicon on Insulator Vertical Super-Thin Body (SOI VSTB) FET | Silicon | Vikas Kumar Radhe Gobinda Debnath Srimanta Baishya | 2023/5 |
Dependence of Lateral Straggle Parameter on DC, RF/Analog, and Linearity Performance in SOI FinFET | IETE Journal of Research | Rajesh Saha Brinda Bhowmick Srimanta Baishya | 2023/9/20 |
Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor | Indian Journal of Physics | Karabi Baruah Srimanta Baishya | 2023/5 |
Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications | Materials Science and Engineering: B | Rajesh Saha Rupam Goswami Brinda Bhowmick Srimanta Baishya | 2023/7/1 |
Numerical assessment of dielectrically-modulated short-double-gate PNPN TFET-based label-free biosensor | Microelectronics Journal | Karabi Baruah Srimanta Baishya | 2023/3/1 |
Comparison of Snapback Phenomenon and Physics in Bottom and Top Body Contact NMOS | Pragati Singh Niladri Pratap Maity Rudra Sankar Dhar Srimanta Baishya | 2023/6/27 | |
Deep Insight into the Noise Behavior of SiGe Source Based Epitaxial Layer Tunnel Field Effect Transistor | Silicon | Radhe Gobinda Debnath Srimanta Baishya | 2023/1 |
Delta-Doped Layer-Based Hetero-Structure DG-PNPN-TFET: Electrical Property and Temperature Dependence | Karabi Baruah Srimanta Baishya | 2022 | |
Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics | International Journal of RF and Microwave Computer‐Aided Engineering | Kuheli Roy Barman Srimanta Baishya | 2022/1 |
A Brief Insight into the Vertical Super-Thin Body (VSTB) MOSFET | Kuheli Roy Barman Srimanta Baishya | 2022/2/16 | |
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique | International Journal of Numerical Modelling: Electronic Networks, Devices and Fields | Rajesh Saha Deepak Kumar Panda Rupam Goswami Brinda Bhowmick Srimanta Baishya | 2022/5 |
Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis | International Journal of RF and Microwave Computer‐Aided Engineering | Karabi Baruah Radhe Gobinda Debnath Srimanta Baishya | 2022/10 |
Performance Evaluation of Double Gate PNPN TFET and Extended-Source Double Gate PNPN TFET as Label-Free Biosensor | Karabi Baruah Srimanta Baishya | 2022/11/16 | |
The beneficial impact of a p–p+ junction on DC and analog/radio frequency performance of a vertical super‐thin body FET | International Journal of RF and Microwave Computer‐Aided Engineering | Kuheli Roy Barman Srimanta Baishya | 2022/1 |
Comparative performance investigation of silicon and germanium junctionless VSTB FET including architectural stress–strain influence | Applied Physics A | Kuheli Roy Barman Srimanta Baishya | 2022/2 |
Physics & modeling of ambipolar snapback behavior in gate grounded nmos | Silicon | Pragati Singh Rudra Sankar Dhar Srimanta Baishya | 2022/5 |
An accurate model of threshold voltage and effect of high-K material for fully depleted graded channel DMDG MOSFET | Silicon | Himeli Chakrabarti Reshmi Maity Srimanta Baishya NP Maity | 2022/10 |
Co-Authors
