Souvik Mahapatra
Indian Institute of Technology Bombay
H-index: 43
Asia-India
Top articles of Souvik Mahapatra
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
A physics-based TCAD framework for NBTI | Solid-State Electronics | Ravi Tiwari Meng Duan Mohit Bajaj Denis Dolgos Lee Smith | 2023/4/1 |
CARAT – A reliability analysis framework for BTI-HCD aging in circuits | Solid-State Electronics | Souvik Mahapatra Prasad Gholve Payel Chatterjee Chaitanya Pasupuleti Hussam Amrouch Narendra Gangwar | 2023/3 |
Comparative analysis of NBTI modeling frameworks BAT and Comphy | Solid-State Electronics | Souvik Mahapatra Aseer Israr Ansari Nilotpal Choudhury Narendra Parihar | 2023/2 |
A physical model for long term data retention characteristics in 3D NAND flash memory | Solid-State Electronics | Rashmi Saikia Souvik Mahapatra | 2023/1/1 |
Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs | Himanshu Diwakar Karansingh Thakor Souvik Mahapatra | 2022/3/27 | |
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs | IEEE Transactions on Electron Devices | Nilotpal Choudhury Souvik Mahapatra | 2022/7 |
Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress | Nilotpal Choudhury Ayush Ranjan Souvik Mahapatra | 2022 | |
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors | Nature | Suraj S Cheema* Nirmaan Shanker* Li-Chen Wang Cheng-Hsiang Hsu Shang-Lin Hsu | 2022/4 |
Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact | Souvik Mahapatra | 2021/11/25 | |
Modeling of Channel Hot Electron Degradation in n-MOSFETs | Karansingh Thakor Himanshu Diwakar Souvik Mahapatra | 2022/10/25 | |
Modeling and Analysis of PBTI, and HCD in Presence of Self-Heating in GAA-SNS NFETs | IEEE Transactions on Electron Devices | Nilotpal Choudhury Souvik Mahapatra | 2022/12 |
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs | Nirmaan Shanker Li-Chen Wang Suraj Singh Cheema Wenshen Li Nilotpal Choudhury | 2022/6 | |
Modeling of Classical Channel Hot Electron Degradation in n-MOSFETs Using TCAD | IEEE Transactions on Electron Devices | Himanshu Diwakar Karansingh Thakor Souvik Mahapatra | 2022/5/26 |
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs | Nilotpal Choudhury Tarun Samadder Ravi Tiwari Huimei Zhou Richard G Southwick | 2021/3/21 | |
BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps | S. Mahapatra N. Parihar T. Samadder N. Choudhury A. Raj | 2021/11 | |
BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs | Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact | Narendra Parihar Nilotpal Choudhury Tarun Samadder Richard Southwick Miaomiao Wang | 2022 |
A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake | Tarun Samadder Satyam Kumar Karansingh Thakor Souvik Mahapatra | 2021/3 | |
BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping | S. Mahapatra N. Parihar N. Choudhury N. Goel | 2021/11 | |
BAT Framework Modeling of RMG HKMG SOI FinFETs | N. Parihar N. Choudhury T. Samadder U. Sharma R. Southwick | 2021/11 | |
Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs | Satyam Kumar Tarun Samadder Karansingh Thakor Uma Sharma Souvik Mahapatra | 2021/3 |
