Siddheswar Maikap
Chang Gung University
H-index: 35
Asia-Taiwan
Top articles of Siddheswar Maikap
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2 by Optimizing TiNx Interfacial Capping Layer and Its … | IEEE Electron Device Letters | Asim Senapati Zhao-Feng Lou Jia-Yang Lee Yi-Pin Chen Shih-Yin Huang | 2024/2/22 |
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit | IEEE Transactions on Electron Devices | K-Y Hsiang F-S Chang Z-F Lou A Aich A Senapati | 2024/2/13 |
Impact of Si-Based Interfacial Layer for Ferroelectric Memory | Siddheswar Maikap Asim Senapati Zhao-Feng Lou Min-Hung Lee | 2023/6/11 | |
Superlattice HfO 2-ZrO 2 based Ferro-Stack HfZrO 2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10 9 cycles for Multibit NVM | C-Y Liao Z-F Lou C-Y Lin A Senapati R Karmakar | 2022/12/3 | |
Ruthenium based RRAM for low variability switching and scaling for contemporary computing systems | Microelectronics Reliability | Mainak Seal Anirudha Deogaonkar Asim Senapati Siddheswar Maikap Nagarajan Raghavan | 2022/11/1 |
Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process | Microelectronics Reliability | Anirudha Deogaonkar Mainak Seal Asim Senapati Sreekanth Ginnaram Alok Ranjan | 2022/11/1 |
Performance Improvement in E-Gun Deposited SiOx-Based RRAM Device by Switching Material Thickness Reduction | Journal of Physics: Conference Series | Sourav Roy Siddheswar Maikap | 2022 |
Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory | Journal of Physics and Chemistry of Solids | Sreekanth Ginnaram Siddheswar Maikap | 2021/4/1 |
Dopamine-Sensing Characteristics and Mechanism by Using N2/O2 Annealing in Pt/Ti/n-Si Structure | Electronics | Yi-Pin Chen Anisha Roy Ping-Hsuan Wu Shih-Yin Huang Siddheswar Maikap | 2021/12/17 |
Ru conducting filament based cross-point resistive switching memory for future low power operation | Siddheswar Maikap Asim Senapati | 2020/6/13 | |
Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application | IEEE Electron Device Letters | Sreekanth Ginnaram Jiantai Timothy Qiu Siddheswar Maikap | 2020/3/13 |
Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor | Electronics | Chiao-Fan Chiu Sreekanth Ginnaram Asim Senapati Yi-Pin Chen Siddheswar Maikap | 2020/9/7 |
In quest of nonfilamentary switching: a synergistic approach of dual nanostructure engineering to improve the variability and reliability of resistive random‐access‐memory devices | Advanced Electronic Materials | Siddheswar Maikap Writam Banerjee | 2020/6 |
Sensing characteristics of dopamine using Pt/n-Si structure | Vacuum | Anisha Roy Siddheswar Maikap Pei-Jer Tzeng Jiantai Timothy Qiu | 2020/2/1 |
Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points | Vacuum | Mrinmoy Dutta Asim Senapati Sreekanth Ginnaram Siddheswar Maikap | 2020/6/1 |
MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application | Asim Senapati Sreekanth Ginnaram Mrinmoy Dutta Siddheswar Maikap | 2020/8/10 | |
Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte–Insulator–Nanowire Structure | Analytical Chemistry | Anisha Roy Yi-Pin Chen Jiantai Timothy Qiu Siddheswar Maikap | 2020/5/13 |
Platinum membrane on Ti/n-Si substrate for dopamine detection | Anisha Roy Siddheswar Maikap Pei-Jer Tzeng Jiantai Timothy Qiu | 2020/8/10 | |
Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a-COx-Based … | ACS omega | Sreekanth Ginnaram Jiantai Timothy Qiu Siddheswar Maikap | 2020/3/17 |
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM | Electronics | Asim Senapati Sourav Roy Yu-Feng Lin Mrinmoy Dutta Siddheswar Maikap | 2020/7/7 |
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