Shoji Ikeda
Tohoku University
H-index: 57
Asia-Japan
Top articles of Shoji Ikeda
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory | 2024/4/16 | ||
Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction | AIP Advances | TVA Nguyen H Naganuma H Honjo S Ikeda T Endoh | 2024/2/1 |
Magnetoresistance effect element and magnetic memory | 2020/5/19 | ||
Silicon wafer and method for producing silicon wafer | 2023/8/3 | ||
Field-free spin-orbit torque switching and large dampinglike spin-orbit torque efficiency in synthetic antiferromagnetic systems using interfacial Dzyaloshinskii-Moriya interaction | Physical Review B | Yoshiaki Saito Shoji Ikeda Nobuki Tezuka Hirofumi Inoue Tetsuo Endoh | 2023/7/20 |
Charge-to-Spin Conversion Efficiency in Synthetic Antiferromagnetic System using Pt-Cu/Ir/Pt-Cu spacer layers | IEEE Transactions on Magnetics | Yoshiaki Saito Shoji Ikeda Hirofumi Inoue Tetsuo Endoh | 2023/6/5 |
Enhancement of Damping-Like Spin-Orbit-Torque Efficiency in Synthetic Antiferromagnetic System using Pt-Cu Alloy | Yoshiaki Saito Shoji Ikeda Hirofumi Inoue Tetsuo Endoh | 2023/5/15 | |
Magnetoresistive effect element and magnetic memory | 2023/4/18 | ||
Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device | 2023/3/21 | ||
Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system | 2023/1/26 | ||
Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system | Applied Physics Express | Yoshiaki Saito Shoji Ikeda Tetsuo Endoh | 2023/1/25 |
Magnetic tunnel junction element and magnetic memory | 2023/1/24 | ||
Platinum-based sputtering target, and method for producing the same | 2023/12/21 | ||
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance> 107 for eFlash-type MRAM | IEICE Technical Report; IEICE Tech. Rep. | H Honjoi K Nishioka S Miura Hiroshi Naganuma T Watanabe | 2023/1/23 |
Magnetoresistive element and magnetic memory | 2019/4/23 | ||
Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer | IEEE Transactions on Magnetics | H Honjo H Naganuma K Nishioka TVA Nguyen M Yasuhira | 2022/2/17 |
Magnetic laminated film, magnetic memory element, and magnetic memory | 2022/12/20 | ||
Nanometer-thin L1-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties | Applied Physics Letters | Yutaro Takeuchi Ryotaro Okuda Junta Igarashi Butsurin Jinnai Takaharu Saino | 2022/1/31 |
Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation | AIP Advances | Hiroshi Naganuma Hiroaki Honjo Chioko Kaneta Koichi Nishioka Shoji Ikeda | 2022/12/1 |
Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array | 2022/10/11 |
