Shiyou Chen (陈时友)

About Shiyou Chen (陈时友)

Shiyou Chen (陈时友), With an exceptional h-index of 112 and a recent h-index of 73 (since 2020), a distinguished researcher at East China Normal University, specializes in the field of Computational Materials Sciences, Condensed Matter Physics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Intrinsic Instability of Rhombohedral (Hf, Zr) O2 Phases and Endurance Crisis of Hf-based Ferroelectric Devices

Defect MoS Misidentified as MoS2 in Monolayer MoS2 by Scanning Transmission Electron Microscopy: A First-Principles Prediction

CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing

Transferable Machine Learning Approach for Predicting Electronic Structures of Charged Defects

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Capturing long-range interaction with reciprocal space neural network

On-chip microfluidic processing of particles

Methods and devices for high throughput purification

Shiyou Chen (陈时友) Information

University

Position

Professor

Citations(all)

76971

Citations(since 2020)

33533

Cited By

57363

hIndex(all)

112

hIndex(since 2020)

73

i10Index(all)

871

i10Index(since 2020)

473

Email

University Profile Page

Google Scholar

Shiyou Chen (陈时友) Skills & Research Interests

Computational Materials Sciences

Condensed Matter Physics

Top articles of Shiyou Chen (陈时友)

Intrinsic Instability of Rhombohedral (Hf, Zr) O2 Phases and Endurance Crisis of Hf-based Ferroelectric Devices

2023/3/10

Defect MoS Misidentified as MoS2 in Monolayer MoS2 by Scanning Transmission Electron Microscopy: A First-Principles Prediction

The Journal of Physical Chemistry Letters

2023/2/13

CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing

IEEE Electron Device Letters

2023/1/9

Transferable Machine Learning Approach for Predicting Electronic Structures of Charged Defects

arXiv preprint arXiv:2306.08017

2023/6/13

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Nano Letters

2023/3/13

Capturing long-range interaction with reciprocal space neural network

arXiv preprint arXiv:2211.16684

2022/11/30

On-chip microfluidic processing of particles

2022/11/8

Methods and devices for high throughput purification

2022/11/1

Elemental de-mixing-induced epitaxial kesterite/CdS interface enabling 13%-efficiency kesterite solar cells

Nature Energy

2022/10

Two-dimensional organic–inorganic room-temperature multiferroics

Journal of the American Chemical Society

2022/8/4

Effective lifetime of non-equilibrium carriers in semiconductors from non-adiabatic molecular dynamics simulations

Nature Computational Science

2022/8

DASP: Defect and dopant ab-initio simulation package

Journal of Semiconductors

2022/4/1

Searching for Band-Dispersive and Defect-Tolerant Semiconductors from Element Substitution in Topological Materials

Journal of the American Chemical Society

2022/3/3

First-principles identification of VI+ Cui defect cluster in cuprous iodide: origin of red light photoluminescence

Nanotechnology

2022/2/15

Microrna let-7 and transforming growth factor beta receptor III axis as target for cardiac injuries

2022/2/15

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Ga3+‐Doping for over 12% Efficient Solar Cells

2021/4

Triple‐Site Dopant–Defect Complexes in Mg–H‐Codoped GaN: First‐Principles Identification

physica status solidi (a)

2021/4

Defect Physics of Ternary Semiconductor with a High Density of Anion-Cation Antisites: A First-Principles Study

Physical Review Applied

2021/2/16

See List of Professors in Shiyou Chen (陈时友) University(East China Normal University)