Shashank Banchhor

About Shashank Banchhor

Shashank Banchhor, With an exceptional h-index of 8 and a recent h-index of 8 (since 2020), a distinguished researcher at Indian Institute of Technology Roorkee, specializes in the field of Analog Circuit Design, Emerging Nanoscale Devices, Device-Circuit Codesign.

His recent articles reflect a diverse array of research interests and contributions to the field:

Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET

Demonstration of a junctionless negative capacitance FinFET-based hydrogen gas sensor: A reliability perspective

Self-heating and interface traps assisted early aging revelation and reliability analysis of negative capacitance FinFET

A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective

Noise Analysis in FinFET-based Analog Circuit with Technology Scaling

Symmetric/Asymmetric Spacer Optimization for Multi Fin FinFET: Analog Perspective for High-Frequency Operation

Unveiling the Impact of Interface Traps Induced on Negative Capacitance Nanosheet FET: A Reliability Perspective

Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs

Shashank Banchhor Information

University

Position

Ph.D

Citations(all)

119

Citations(since 2020)

118

Cited By

23

hIndex(all)

8

hIndex(since 2020)

8

i10Index(all)

6

i10Index(since 2020)

6

Email

University Profile Page

Indian Institute of Technology Roorkee

Google Scholar

View Google Scholar Profile

Shashank Banchhor Skills & Research Interests

Analog Circuit Design

Emerging Nanoscale Devices

Device-Circuit Codesign

Top articles of Shashank Banchhor

Title

Journal

Author(s)

Publication Date

Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET

Sunil Rathore

Rajeewa Kumar Jaisawal

PN Kondekar

Navneet Gandhi

Shashank Banchhor

...

2023/3/26

Demonstration of a junctionless negative capacitance FinFET-based hydrogen gas sensor: A reliability perspective

Navneet Gandhi

Rajeewa Kumar Jaisawal

Sunil Rathore

PN Kondekar

Shashank Banchhor

...

2023/3/7

Self-heating and interface traps assisted early aging revelation and reliability analysis of negative capacitance FinFET

Rajeewa Kumar Jaisawal

Sunil Rathore

Navneet Gandhi

PN Kondekar

Shashank Banchhor

...

2023/3/7

A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective

Shashank Banchhor

Navjeet Bagga

Nitanshu Chauhan

S Manikandan

Avirup Dasgupta

...

2023/3/7

Noise Analysis in FinFET-based Analog Circuit with Technology Scaling

Mallikarjun Patil

Rajeewa Kumar Jaisawal

Shashank Banchhor

Navneet Gandhi

Navjeet Bagga

...

2023/4/7

Symmetric/Asymmetric Spacer Optimization for Multi Fin FinFET: Analog Perspective for High-Frequency Operation

Jyoti Patel

Navjeet Bagga

Shashank Banchhor

Sudeb Dasgupta

2022/12/11

Unveiling the Impact of Interface Traps Induced on Negative Capacitance Nanosheet FET: A Reliability Perspective

Aniket Gupta

Govind Bajpai

Navjeet Bagga

Shashank Banchhor

Sudeb Dasgupta

...

2022/7/17

Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs

Semiconductor Science and Technology

Sarita Yadav

Nitanshu Chauhan

Raghav Chawla

Arvind Sharma

Shashank Banchhor

...

2022/7/12

Impact of random spatial fluctuation in non-uniform crystalline phases on multidomain MFIM capacitor and negative capacitance FDSOI

Nitanshu Chauhan

Chirag Garg

Kai Ni

Amit Kumar Behera

Sarita Yadav

...

2022

Design optimization Using Symmetric/Asymmetric Spacer for 14 nm Multi-Fin Tri-gate Fin-FET for Mid-Band 5G Applications

Jyoti Patel

Shashank Banchhor

Surila Guglani

Avirup Dasgupta

Sourajeet Roy

...

2022/2/26

Analysis and Modeling of Leakage Currents in Stacked Gate-All-Around Nanosheet Transistors

Manikandan Subramaniyan

Nitanshu Chauhan

Navjeet Bagga

Abhishek Kumar

Shashank Kumar Banchhor

...

2022/12

Gain stabilization methodology for FinFET amplifiers considering self-heating effect

Shashank Banchhor

Nitanshu Chauhan

Aditya Doneria

Bulusu Anand

2021/2/20

BOX engineering to mitigate negative differential resistance in MFIS negative capacitance FDSOI FET: an analog perspective

Nanotechnology

Nitanshu Chauhan

Navjeet Bagga

Shashank Banchhor

Chirag Garg

Arvind Sharma

...

2021/12/2

A physical insight into variation aware minimum V DD for deep subthreshold operation of FinFET

Semiconductor Science and Technology

Sarita Yadav

Nitanshu Chauhan

Shobhit Tyagi

Arvind Sharma

Shashank Banchhor

...

2021/10/25

A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistors

Semiconductor Science and Technology

Shashank Banchhor

Nitanshu Chauhan

Bulusu Anand

2021/1/13

Negative-to-positive differential resistance transition in ferroelectric FET: physical insight and utilization in analog circuits

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Nitanshu Chauhan

Navjeet Bagga

Shashank Banchhor

Arnab Datta

Sudeb Dasgupta

...

2021/9/29

Investigation of trap-induced performance degradation and restriction on higher ferroelectric thickness in negative capacitance FDSOI FET

IEEE Transactions on Electron Devices

Chirag Garg

Nitanshu Chauhan

Arvind Sharma

Shashank Banchhor

Aditya Doneria

...

2021/9/14

Traps based reliability barrier on performance and revealing early ageing in negative capacitance FET

Aniket Gupta

Govind Bajpai

Priyanshi Singhal

Navjeet Bagga

Om Prakash

...

2021/3/21

Analysis of Transient Negative Capacitance Characteristics for Stabilization and Amplification

Nitanshu Chauhan

Govind Bajpai

Shashank Banchhor

Navjeet Bagga

2020/7/23

See List of Professors in Shashank Banchhor University(Indian Institute of Technology Roorkee)