shafi qureshi

About shafi qureshi

shafi qureshi, With an exceptional h-index of 17 and a recent h-index of 8 (since 2020), a distinguished researcher at Indian Institute of Technology Kanpur, specializes in the field of Semiconductor Device Physics and Modeling, Circuit Design.

His recent articles reflect a diverse array of research interests and contributions to the field:

ASIC Implementation of UART chip having 16 Baud Rates at SCL 180 nm Technology Node

Simulation Study: Process, Device and Circuit Implementation of Tubs in the BOX (TBOX) cSiGe PMOSFET having low Off State Leakage Current

Design of 50 MHz PLL using indigenous SCL 180 nm CMOS Technology

Proposed Process Flow for Potential Well Based FDSOI MOSFET at 20 nm Gate Length

Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs-A Simulation and Device Physics Based Study: Part I: Theory and Methodology

Design of reconfigurable multi-band low-noise amplifiers for 802.11 ah/b/g and DCS-1800 applications

shafi qureshi Information

University

Position

___

Citations(all)

1003

Citations(since 2020)

236

Cited By

832

hIndex(all)

17

hIndex(since 2020)

8

i10Index(all)

30

i10Index(since 2020)

7

Email

University Profile Page

Indian Institute of Technology Kanpur

Google Scholar

View Google Scholar Profile

shafi qureshi Skills & Research Interests

Semiconductor Device Physics and Modeling

Circuit Design

Top articles of shafi qureshi

Title

Journal

Author(s)

Publication Date

ASIC Implementation of UART chip having 16 Baud Rates at SCL 180 nm Technology Node

Sanjay Sharma

C Shekhar

S Qureshi

2022/7/8

Simulation Study: Process, Device and Circuit Implementation of Tubs in the BOX (TBOX) cSiGe PMOSFET having low Off State Leakage Current

Sanjay Sharma

S Qureshi

2022/2/11

Design of 50 MHz PLL using indigenous SCL 180 nm CMOS Technology

Chandra Shekhar

Shafi Qureshi

2021/12/18

Proposed Process Flow for Potential Well Based FDSOI MOSFET at 20 nm Gate Length

Chandan K Jaiswal

Shruti Mehrotra

S Qureshi

2020/4/6

Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs-A Simulation and Device Physics Based Study: Part I: Theory and Methodology

arXiv preprint arXiv:2007.02270

Shruti Mehrotra

S Qureshi

2020/7/5

Design of reconfigurable multi-band low-noise amplifiers for 802.11 ah/b/g and DCS-1800 applications

AEU-International Journal of Electronics and Communications

Rajani Bisht

MJ Akhtar

S Qureshi

2020/6/1

See List of Professors in shafi qureshi University(Indian Institute of Technology Kanpur)