Sarit Dhar
Auburn University
H-index: 39
North America-United States
Top articles of Sarit Dhar
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing | Journal of Applied Physics | Suman Das Hengfei Gu Lu Wang Ayayi Ahyi Leonard C Feldman | 2023/6/7 |
Zadek Osteotomy, a Good Treatment Option for Refractory Haglund’s Deformity | Cureus | Yiteng Xu Zulfiqar A Haider Vail Karuppiah Sunil Dhar Zulfiqar Haider | 2023/5/25 |
Nitrogen Annealing As a Sustainable Method for Interface Trap Passivation in 4H-SiC Mosfets | Electrochemical Society Meeting Abstracts 242 | Suman Das Hengfei Gu Lu Wang Ayayi Ahyi Leonard C Feldman | 2022/10/9 |
Study of carrier mobilities in 4H-SiC MOSFETS using Hall analysis | Materials | Suman Das Yongju Zheng Ayayi Ahyi Marcelo A Kuroda Sarit Dhar | 2022/9/28 |
(Invited, Digital Presentation) Interface Charge Trapping and Scattering in SiC MOSFET Channels | Electrochemical Society Meeting Abstracts 241 | Sarit Dhar Suman Das Ayayi Ahyi Marcelo Kuroda | 2022/7/7 |
Nitrogen‐Induced Changes in the Electronic and Structural Properties of 4H‐SiC (0001)/SiO2 Interfaces | physica status solidi (b) | Lu Wang Sarit Dhar Leonard C Feldman Marcelo A Kuroda | 2022/2 |
High conductivity β-Ga2O3 formed by hot Si ion implantation | Applied Physics Letters | Arka Sardar Tamara Isaacs-Smith Jacob Lawson Thaddeus Asel Ryan B Comes | 2022/12/26 |
Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors | Journal of Applied Physics | IU Jayawardhena RP Ramamurthy D Morisette AC Ahyi R Thorpe | 2021/2/21 |
Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors | Micron | Christopher J Klingshirn Asanka Jayawardena Sarit Dhar Rahul P Ramamurthy Dallas Morisette | 2021/1/1 |
Interface States Passivation for p-Channel 4H-SiC MOS Devices | Electrochemical Society Meeting Abstracts 240 | Suman Das Tamara Isaacs-smith Ayayi Ahyi Marcelo Kuroda Sarit Dhar | 2021/10/19 |
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors | Semiconductor Science and Technology | Vahid Mirkhani Shiqiang Wang Kosala Yapabandara Muhammad Shehzad Sultan Min Prasad Khanal | 2021/9/21 |
Analytical electron microscopy of ((2) over-bar01) beta-Ga2O3/SiO2 and ((2) over-bar01) beta-Ga2O3/Al2O3 interface structures in MOS capacitors | JOURNAL OF APPLIED PHYSICS | Christopher J Klingshirn Asanka Jayawardena Sarit Dhar Rahul P Ramamurthy Dallas Morisette | 2021/5/21 |
Analytical electron microscopy of (2¯ 01) β-Ga2O3/SiO2 and (2¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors | Journal of Applied Physics | Christopher J Klingshirn Asanka Jayawardena Sarit Dhar Rahul P Ramamurthy Dallas Morisette | 2021/5/21 |
High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors | Journal of Applied Physics | Suman Das Tamara Isaacs-Smith Ayayi Ahyi Marcelo A Kuroda Sarit Dhar | 2021/12/14 |
