Rongming Chu
Penn State University
H-index: 35
North America-United States
Top articles of Rongming Chu
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor | Applied Physics Letters | Jianan Song Anusmita Chakravorty Miaomiao Jin Rongming Chu | 2024/4/22 |
Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation | Applied Physics Letters | Mahjabin Mahfuz Farshid Reza Xingyu Liu Rongming Chu Maik Lang | 2024/3/11 |
Super-heterojunction schottky diode | 2024/1/25 | ||
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching | IEEE Transactions on Electron Devices | Jesse T Kemmerling Rian Guan Mansura Sadek Yixin Xiong Jianan Song | 2024/1/2 |
Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module | Danielle Lester Mark Cairnie Christina DiMarino Sang-Woo Han Rongming Chu | 2023/10/29 | |
8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode | Sang-Woo Han Mansura Sadek Jesse T Kemmerling Rian Guan Rongming Chu | 2022/3/6 | |
Doped gate dielectrics materials | Yu Cao Rongming Chu Zijian Ray Li | 2022/9/6 | |
In situ fabrication of horizontal nanowires and device using same | 2022/6/14 | ||
Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes | IEEE Electron Device Letters | Jesse T Kemmerling Rian Guan Mansura Sadek Sundar Isukapati Woongje Sung | 2022/3/29 |
High-temperature static and dynamic characteristics of 4.2-kV GaN super-heterojunction pn diodes | IEEE Transactions on Electron Devices | Mansura Sadek Sang-Woo Han Jianan Song James C Gallagher Travis J Anderson | 2022/3/15 |
Low modulation-voltage cryogenic diode structure | 2021/2/2 | ||
GaN super-heterojunction Schottky barrier diode with over 10 kV blocking voltage | Sang-Woo Han Jianan Song Rongming Chu | 2021/4/8 | |
Doped gate dielectric materials | 2021/1/26 | ||
GaN MOS Structures with Low Interface Trap Density | Solid State Phenomena | Rong Ming Chu | 2021/3/9 |
III-nitride field-effect transistor with dual gates | 2021/11/23 | ||
Digital alloy based back barrier for P-channel nitride transistors | 2021/3/9 | ||
12.5 kV GaN super-heterojunction Schottky barrier diodes | IEEE Transactions on Electron Devices | Sang-Woo Han Jianan Song Mansura Sadek Alex Molina Mona A Ebrish | 2021/9/24 |
Semiconductor device having in situ formed horizontal nanowire structure | 2021/3/2 | ||
Study of interface trap density of AlOxNy/GaN MOS structures | Applied Physics Letters | Jianan Song Sang-Woo Han Haoting Luo Jaime Rumsey Jacob H Leach | 2021/9/20 |
FET transistor on a III-V material structure with substrate transfer | 2021/2/9 |
