Rino Choi
Inha University
H-index: 50
Asia-South Korea
Top articles of Rino Choi
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered HfZrO | IEEE Transactions on Electron Devices | Changhyeon Han Ki Ryun Kwon Jiyong Yim Jeonghan Kim Sangwoo Kim | 2024/4/3 |
Formation techniques for upper active channel in monolithic 3D integration: an overview | An Hoang-Thuy Nguyen Manh-Cuong Nguyen Anh-Duy Nguyen Seung Joon Jeon Noh-Hwal Park | 2024/1/29 | |
Experimental Demonstration of Combination-Encoding Content-Addressable Memory of 0.75 bits/switch Utilizing Hf-Zr-O Ferroelectric Tunnel Junctions | Materials Horizons | Cuong-Nguyen Manh Jiwon You Yonguk Sim Rino Choi Doo Seok Jeong | 2024 |
The Effect of High-Pressure Hydrogen or Deuterium Annealing on Electrical Performance of Indium Gallium Zinc Oxide Thin-Film Transistors | IEEE Transactions on Electron Devices | An Hoang-Thuy Nguyen Manh-Cuong Nguyen Anh-Duy Nguyen No-Hwal Park Seung Joon Jeon | 2023/2/9 |
Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications | Japanese Journal of Applied Physics | Dan N Le Taehee Park Su Min Hwang Jin-Hyun Kim Yong Chan Jung | 2023/6/8 |
Low-temperature laser crystallization of Ge layers grown on MgO substrates | Applied Surface Science | Jongyeon Baek Seung-Hwan Kim Heejae Jeong Manh-Cuong Nguyen Daeyoon Baek | 2023/1/30 |
Effects of High‐Pressure H2 and D2 Post‐Metallization Annealing on the Electrical Properties of HfO2/Si0.7Ge0.3 | physica status solidi (RRL)–Rapid Research Letters | Jinyong Kim Seongheum Choi An Hoang-Thuy Nguyen Woohui Lee Rino Choi | 2023/4 |
Light outcoupling strategies in oriented perovskite light-emitting-diodes: recent trends, opportunities, and challenges toward innovation | Materials Chemistry Frontiers | Muhammad Imran Saleem Rino Choi Jeong-Hwan Lee* | 2023/5 |
Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer | IEEE Electron Device Letters | Sang Woo Kim Wonjun Shin Munhyeon Kim Ki Ryun Kwon Jiyong Yim | 2023/10/23 |
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor with Amorphous Indium–Gallium–Zinc Oxide Channel | IEEE Electron Device Letters | Soi Jeong Changhyeon Han Jiyong Yim Jeonghan Kim Ki Ryun Kwon | 2023/3/23 |
Ferroelectric polarization-switching acceleration of sputtered Hf0. 5Zr0. 5O2 with defect-induced polarization of interlayer | Journal of Alloys and Compounds | Changhyeon Han Jiyong Yim An Nguyen Jeonghan Kim Ki Ryun Kwon | 2023/10/15 |
A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications | Hye Ryeon Park Jeong Gyu Yoo Jong Mook Kang Min Kwan Cho Taeho Gong | 2023/3/7 | |
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2 | Materials Science in Semiconductor Processing | Changhyeon Han Ki Ryun Kwon Jeonghan Kim Jiyong Yim Sangwoo Kim | 2023/6/15 |
3-Dimensional Integration with High Interconnection Density | Rino Choi Ye-Eun Hong Anh Duy Nguyen | 2022/9/21 | |
Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly … | Solar Energy Materials and Solar Cells | Sara Pouladi Carlos Favela Weijie Wang Mina Moradnia Nam-In Kim | 2022/8/15 |
(Digital Presentation) Evaluation of the O3 and H2o Oxidants in Downscaling Eot of Ferroelectric Hf0.5Zr0.5O2 on Silicon | Electrochemical Society Meeting Abstracts 241 | Heber Hernandez-Arriaga Jaidah Mohan Yong Chan Jung Jin-Hyun Kim Chang-Han Rho | 2022/7/7 |
Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD) | Dan N Le Su Min Hwang Jihoon Woo Seungsoo Choi Taehee Park | 2022/12/1 | |
Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2 | IEEE Transactions on Electron Devices | Changhyeon Han Seok Jin Kwon Jiyong Yim Jeonghan Kim Sangwoo Kim | 2022/4/28 |
Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant | Applied Physics Letters | Yong Chan Jung Jin-Hyun Kim Heber Hernandez-Arriaga Jaidah Mohan Su Min Hwang | 2022/11/28 |
High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1, 1, 1-tris (dimethylamino) disilane | Journal of Vacuum Science & Technology A | Su Min Hwang Harrison Sejoon Kim Dan N Le Akshay Sahota Jaebeom Lee | 2022/3/1 |
