Peng YANG at Fudan University

University	Fudan University
Position	___
Citations(all)	546
Citations(since 2020)	534
Cited By	123
hIndex(all)	13
hIndex(since 2020)	13
i10Index(all)	16
i10Index(since 2020)	16
Email	Access Email
University Profile Page	Fudan University
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A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Advanced Materials

2024/1

Siyuan Li

H-Index: 4

Chen Qian

H-Index: 2

Peng Yang

H-Index: 14

Zhuomin Zhang

H-Index: 42

Wei Wang

H-Index: 14

Johnny C Ho

H-Index: 13

Chaoliang Tan

H-Index: 55

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Advanced Optical Materials

2023/12

Peng Yang

H-Index: 14

Yi Liu

H-Index: 21

Rui Cao

H-Index: 10

Bing Wang

H-Index: 18

Wei Wang

H-Index: 14

Long Zheng

H-Index: 8

Ye Chen

H-Index: 4

Qiyuan He

H-Index: 38

Xing Chen

H-Index: 14

Ke Jiang

H-Index: 1

Johnny C Ho

H-Index: 13

Han Zhang

H-Index: 2

Chaoliang Tan

H-Index: 55

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

Nanotechnology

2023/11/6

Xinyu Wang

H-Index: 4

Xinyu Chen

H-Index: 1

Ling Tong

H-Index: 1

Xinzhi Zhang

H-Index: 3

Peng Yang

H-Index: 14

Zihan Xu

H-Index: 1

Zhijun Qiu

H-Index: 2

Peng Zhou

H-Index: 12

Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors

Applied Physics Letters

2023/7/24

Siyuan Li

H-Index: 4

Chen Ma

H-Index: 10

Peng Yang

H-Index: 14

Zhuomin Zhang

H-Index: 42

Ye Chen

H-Index: 4

Johnny C Ho

H-Index: 13

Chaoliang Tan

H-Index: 55

Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe2-Based 2D van der Waals …

ACS applied materials & interfaces

2023/7/17

Peng Yang

H-Index: 14

Long Zheng

H-Index: 8

Zhuomin Zhang

H-Index: 42

Ye Chen

H-Index: 4

Hau Ping Chan

H-Index: 13

Johnny C Ho

H-Index: 13

Chaoliang Tan

H-Index: 55

Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

SmartMat

2023/7/14

Zongxiao Wu

H-Index: 6

Wenbin Wang

H-Index: 19

Peng Yang

H-Index: 14

Chen Ma

H-Index: 10

Kai Bao

H-Index: 16

Ye Chen

H-Index: 4

Chaoliang Tan

H-Index: 55

Qiyuan He

H-Index: 38

Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors

2023/5/12

Tingke Rao

H-Index: 4

Peng Yang

H-Index: 14

Electronic/optoelectronic memory device enabled by tellurium‐based 2D van der Waals heterostructure for in‐sensor reservoir computing at the optical communication band

Advanced Materials

2023/5

Apoorva Chaturvedi

H-Index: 18

Peng Yang

H-Index: 14

Yao Yao

H-Index: 15

Siyuan Li

H-Index: 4

Zhuomin Zhang

H-Index: 42

Wei Wang

H-Index: 14

Zhen Yuan

H-Index: 0

Qiyuan He

H-Index: 38

Johnny C Ho

H-Index: 13

Hua Zhang

H-Index: 22

Chaoliang Tan

H-Index: 55

Printed electronics based on 2D material inks: preparation, properties, and applications toward memristors

2023/2

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

Tingke Rao

H-Index: 4

Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics

2023/2

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

Yang Chai

H-Index: 54

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Nano-micro letters

2022/12

Peng Yang

H-Index: 14

Long Zheng

H-Index: 8

Tengfei Xiong

H-Index: 10

Zhuomin Zhang

H-Index: 42

Ye Chen

H-Index: 4

Chaoliang Tan

H-Index: 55

Low dimensional transition metal oxide towards advanced electrochromic devices

2022/9/1

Tingke Rao

H-Index: 4

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

Fluoride-assisted preparation of plasmonic oxygen-deficient MoO3− x nanowires for dual-band electrochromic smart windows

Journal of The Electrochemical Society

2022/6/6

Tingke Rao

H-Index: 4

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

Self-assembling SiC nanoflakes/MXenes composites embedded in polymers towards efficient electromagnetic wave attenuation

Applied Surface Science

2022/2/1

Min Wu

H-Index: 9

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

Tingke Rao

H-Index: 4

BaTiO3-assisted exfoliation of boron nitride nanosheets for high-temperature energy storage dielectrics and thermal management

Chemical Engineering Journal

2022/1/1

Min Wu

H-Index: 9

Jie Jiang

H-Index: 3

Lin Zhang

H-Index: 9

Tingke Rao

H-Index: 4

Peng Yang

H-Index: 14

Fabrication of a mesoporous multimetallic oxide-based ion-sensitive field effect transistor for pH sensing

ACS omega

2021/11/17

Tingke Rao

H-Index: 4

Jialin Li

H-Index: 2

Min Wu

H-Index: 9

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

ACS Applied Nano Materials

2021/11/9

Peng Yang

H-Index: 14

Haifeng Yang

H-Index: 11

Jianan Deng

H-Index: 31

Qiang Xu

H-Index: 10

Haomin Wang

H-Index: 8

Fei Chen

H-Index: 15

Yulin Chen

H-Index: 15

Ran Liu

H-Index: 15

Extended-gate field effect transistors with zinc oxide as sensing film for pH sensing

2021/7/9

Jialin Li

H-Index: 2

Tingke Rao

H-Index: 4

Jie Jiang

H-Index: 3

Peng Yang

H-Index: 14

The photoresponsivity of monolayer molybdenum disulfide grown by chemical vapor deposition with different seeding promoters

Applied Physics Express

2020/6/24

Jiajun Chen

H-Index: 0

Peng Yang

H-Index: 14

Ran Liu

H-Index: 15

Xin-Ping Qu

H-Index: 17

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Nature communications

2020/2/12

Qingtian Li

H-Index: 22

Peng Yang

H-Index: 14

Chao Zhang

H-Index: 2

Zhi Liu

H-Index: 8

Haomin Wang

H-Index: 8

Peng YANG

Fudan University

About Peng YANG

Peng YANG Information

Peng YANG Skills & Research Interests

Top articles of Peng YANG

A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Siyuan Li

Chen Qian

Peng Yang

Zhuomin Zhang

Wei Wang

Johnny C Ho

Chaoliang Tan

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Peng Yang

Yi Liu

Rui Cao

Bing Wang

Wei Wang

Long Zheng

Ye Chen

Qiyuan He

Xing Chen

Ke Jiang

Johnny C Ho

Han Zhang

Chaoliang Tan

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

Xinyu Wang

Xinyu Chen

Ling Tong

Xinzhi Zhang

Peng Yang

Zihan Xu

Zhijun Qiu

Peng Zhou

Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors

Siyuan Li

Chen Ma

Peng Yang

Zhuomin Zhang

Ye Chen

Johnny C Ho

Chaoliang Tan

Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe2-Based 2D van der Waals …

Peng Yang

Long Zheng

Zhuomin Zhang

Ye Chen

Hau Ping Chan

Johnny C Ho

Chaoliang Tan

Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

Zongxiao Wu

Wenbin Wang

Peng Yang

Chen Ma

Kai Bao

Ye Chen

Chaoliang Tan

Qiyuan He

Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors

Tingke Rao

Peng Yang

Electronic/optoelectronic memory device enabled by tellurium‐based 2D van der Waals heterostructure for in‐sensor reservoir computing at the optical communication band

Apoorva Chaturvedi

Peng Yang

Yao Yao

Siyuan Li

Zhuomin Zhang

Wei Wang

Zhen Yuan

Qiyuan He

Johnny C Ho

Hua Zhang

Chaoliang Tan

Printed electronics based on 2D material inks: preparation, properties, and applications toward memristors

Jie Jiang

Peng Yang