Neil Curson

Neil Curson

University College London

H-index: 31

Europe-United Kingdom

About Neil Curson

Neil Curson, With an exceptional h-index of 31 and a recent h-index of 15 (since 2020), a distinguished researcher at University College London, specializes in the field of Nanoscale electronics, quantum computers, scanning probe microscopy, materials characterisation, surface science.

His recent articles reflect a diverse array of research interests and contributions to the field:

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Characterising arsenic dopant incorporation in germanium

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Resistless EUV lithography: Photon-induced oxide patterning on silicon

Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy

Bismuth trichloride as a molecular precursor for silicon doping

Neil Curson Information

University

Position

Professor of Nanoelectronics London Centre for Nanotechnology

Citations(all)

3088

Citations(since 2020)

815

Cited By

2514

hIndex(all)

31

hIndex(since 2020)

15

i10Index(all)

51

i10Index(since 2020)

19

Email

University Profile Page

University College London

Google Scholar

View Google Scholar Profile

Neil Curson Skills & Research Interests

Nanoscale electronics

quantum computers

scanning probe microscopy

materials characterisation

surface science

Top articles of Neil Curson

Title

Journal

Author(s)

Publication Date

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Nature Communications

Procopios Constantinou

Taylor JZ Stock

Li-Ting Tseng

Dimitrios Kazazis

Matthias Muntwiler

...

2024/1/24

Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy

arXiv preprint arXiv:2403.13935

José Bustamante

Yoichi Miyahara

Logan Fairgrieve-Park

Kieran Spruce

Patrick See

...

2024/3/20

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

arXiv preprint arXiv:2403.07251

Megan Cowie

Procopios C Constantinou

Neil J Curson

Taylor JZ Stock

Peter Grutter

2024/3/12

Characterising arsenic dopant incorporation in germanium

Bulletin of the American Physical Society

Rebecca Conybeare

Procopios Constantinou

Taylor Stock

Neil Curson

Vladimir Strokov

...

2024/3/6

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Advanced Materials

Taylor JZ Stock

Oliver Warschkow

Procopios C Constantinou

David R Bowler

Steven R Schofield

...

2024/2/21

Resistless EUV lithography: Photon-induced oxide patterning on silicon

Science Advances

Li-Ting Tseng

Prajith Karadan

Dimitrios Kazazis

Procopios C Constantinou

Taylor JZ Stock

...

2023/4/19

Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy

arXiv preprint arXiv:2310.03409

Mateus G Masteghin

Toussaint Gervais

Steven K Clowes

David C Cox

Veronika Zelyk

...

2023/10/5

Bismuth trichloride as a molecular precursor for silicon doping

Applied Physics Letters

Steven Schofield

Eric LUNDGREN

Rebecca Conybeare

Taylor Stock

Neil Curson

...

2023/5/27

Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon

Advanced Science

Procopios Constantinou

Taylor JZ Stock

Eleanor Crane

Alexander Kölker

Marcel van Loon

...

2023/9

Room temperature incorporation of arsenic atoms into the germanium (001) surface

Angewandte Chemie

Emily VS Hofmann

Taylor JZ Stock

Oliver Warschkow

Rebecca Conybeare

Neil J Curson

...

2023/2/6

Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)

The Journal of Physical Chemistry C

Eric AS Lundgren

Carly Byron

Procopios Constantinou

Taylor JZ Stock

Neil J Curson

...

2023/8/14

Spatially resolved dielectric loss at the Si/SiO interface

arXiv preprint arXiv:2306.13648

Megan Cowie

Taylor JZ Stock

Procopios C Constantinou

Neil Curson

Peter Grütter

2023/6/23

Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

Advanced Electronic Materials

Nicolò D'Anna

Dario Ferreira Sanchez

Guy Matmon

Jamie Bragg

Procopios C Constantinou

...

2023/5

Room temperature donor incorporation for quantum devices: arsine on germanium

arXiv preprint arXiv:2203.08769

Emily VS Hofmann

Taylor JZ Stock

Oliver Warschkow

Rebecca Conybeare

Neil J Curson

...

2022/3/16

In operando charge transport imaging of atomically thin dopant nanostructures in silicon

Nanoscale

Alexander Kölker

Georg Gramse

Taylor JZ Stock

Gabriel Aeppli

Neil J Curson

2022

Arsine on germanium: a new route to donor-based quantum devices.

APS March Meeting Abstracts

Steven Schofield

Neil Curson

Emily Hofman

Taylor Stock

Wolfgang Klesse

...

2022

Modification of the Ge (0 0 1) subsurface electronic structure after adsorption of Sn

Applied Surface Science

Felix Reichmann

Andreas P Becker

Emily VS Hofmann

Neil J Curson

Wolfgang M Klesse

...

2022/10/15

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Advanced electronic materials

Gemma Chapman

Haris Votsi

Taylor JZ Stock

Steven K Clowes

Neil J Curson

...

2022/5

The formation of a Sn monolayer on Ge (1 0 0) studied at the atomic scale

Applied Surface Science

Emily VS Hofmann

Emilio Scalise

Francesco Montalenti

Taylor JZ Stock

Steven R Schofield

...

2021/9/30

Ge (001) surface reconstruction with Sn impurities

Surface Science

Katharina Noatschk

EVS Hofmann

J Dabrowski

NJ Curson

T Schroeder

...

2021/11/1

See List of Professors in Neil Curson University(University College London)