Na Ren
University of California, Los Angeles
H-index: 17
North America-United States
Top articles of Na Ren
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Design of High-temperature Packaging Insulation for Power Modules using Grafted Nanostructured Silicone Elastomer Composites | IEEE Transactions on Dielectrics and Electrical Insulation | Qilong Wang Xiangrong Chen Junye Li Ashish Paramane Xiaofan Huang | 2024/3/5 |
Post-trench restoration for vertical GaN power devices | Applied Physics Letters | Yanjun Li Na Ren Hengyu Wang Qing Guo Ce Wang | 2024/2/26 |
Design of Interfacial Electrical Tree-resistant Packaging Insulation Using Grafted Silicone Elastomer Nanocomposites for High-temperature Power Modules | IEEE Transactions on Power Electronics | Qilong Wang Xiangrong Chen Ashish Paramane Junye Li Xiaofan Huang | 2024/2/13 |
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs | IEEE Transactions on Electron Devices | Li Liu Qing Guo Jue Wang Miaoguang Bai Junze Li | 2024/1/26 |
1540 V 21.8 mΩ· cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications | Solid-State Electronics | Li Liu Jue Wang Zhengyun Zhu Hongyi Xu Qing Guo | 2024/1/1 |
Experimental investigations on short-circuit capability of a new structure planar SiC MOSFETs | Chaobiao Lin Na Ren Hongyi Xu Zhengyun Zhu Kuang Sheng | 2023/2/7 | |
Silicon Carbide Trench Gate MOSFET and Method for Manufacturing Thereof | 2023/4/27 | ||
Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC | Chinese Physics B | Zewei Shao Hongyi Xu Hengyu Wang Na Ren Kuang Sheng | 2023/7/1 |
A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique | Micromachines | Baozhu Wang Hongyi Xu Na Ren Hengyu Wang Kai Huang | 2023/12/7 |
The Investigation of 1200V SiC MOSFET Radiation Ruggedness with Different Channel Lengths | Hongyi Xu Na Ren Zhengjia Chen Zeyu Re Xin Wan | 2023/2/7 | |
Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design | IEEE Transactions on Electron Devices | Chaobiao Lin Na Ren Hongyi Xu Kuang Sheng | 2023/4/7 |
Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode | Key Engineering Materials | Chong Yu Jiang Hong Yi Xu Song Lin Yang Heng Yu Wang Na Ren | 2023/6/1 |
Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs | Electronics | Hongyi Xu Baozhu Wang Na Ren Hu Long Kai Huang | 2023/11/30 |
A Prediction for Allowable Maximum Turn-on Speed of SiC Power Module by A Correlation Between Turn-on Transient Waveforms | Maosheng Zhang Qing Guo Hengyu Wang Na Ren Kuang Sheng | 2023/2/7 | |
Trench gate silicon carbide mosfet with high reliability | 2023/3/9 | ||
Electrical characterization and analysis of 4H-SiC lateral MOSFET (LMOS) for high-voltage power integrated circuits | Li Liu Jue Wang Zishi Wang Miaoguang Bai Junze Li | 2023/5/28 | |
Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation | Rongxi Jin Na Ren Hongyi Xu Kuang Sheng | 2023/11/10 | |
Implantation-free SiC thyristor with single-mask 3D termination near 10 kV | Solid-State Electronics | Hu Long Na Ren Kuang Sheng | 2023/3/1 |
Heavy Ion-Induced Damage in SiC Power MOSFETs with different WJFET | Yufu He Hongyi Xu Na Ren Xin Wan | 2023/5/26 | |
Fast-Turn-On Floating Island Device and Method for Manufacturing Thereof | 2023/8/24 |
Co-Authors
