Min Hwa Lee
Chung-Ang University
H-index: 48
Asia-South Korea
Top articles of Min Hwa Lee
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit | IEEE Transactions on Electron Devices | K-Y Hsiang F-S Chang Z-F Lou A Aich A Senapati | 2024/2/13 |
Image encoding/decoding method and device | 2024/1/2 | ||
The cosmic ray energetics and mass for the international space station (ISS-CREAM) instrument | Astroparticle Physics | YS Yoon Y Amare D Angelaszek N Anthony K Cheryian | 2024/2/15 |
Cryogenic Endurance of Anti-ferroelectric and Ferroelectric for Quantum Computing Applications | K-Y Hsiang J-Y Lee Z-F Lou F-S Chang Z-X Li | 2023/3/26 | |
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles … | J-Y Lee F-S Chang K-Y Hsiang P-H Chen Z-F Luo | 2023/6/11 | |
Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM | IEEE Transactions on Electron Devices | K-Y Hsiang J-Y Lee Z-F Lou F-S Chang Y-C Chen | 2023/1/30 |
FeRAM recovery up to 200 periods with accumulated endurance 1012 cycles and an applicable array circuit toward unlimited eNVM operations | K-Y Hsiang J-Y Lee F-S Chang Z-F Lou Z-X Li | 2023/6/11 | |
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals | IEEE Transactions on Electron Devices | Y-T Tsai Nilabh Basu T-W Chen Y-C Chan H-Y Lin | 2023/6/7 |
Method and apparatus for transform-based image encoding/decoding | 2023/11/23 | ||
First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials | arXiv preprint arXiv:2307.01114 | S-C Lee Y-T Chen C-R Liu S-M Wang Y-T Tang | 2023/6/1 |
Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed | arXiv preprint arXiv:2307.04404 | Y-T Tsai C-R Liu Y-T Chen S-M Wang Z-K Chen | 2023/7/10 |
The Analysis of Multiwall Carbon Nanotubes as Through Silicon Via by Equivalent Circuit Model at Different Operating Temperatures in Multilayers Stacking Scheme | IEEE Transactions on Electron Devices | Y-C Chan Nilabh Basu T-W Chen Y-T Tsai H-Y Lin | 2023/4/28 |
First stacked nanosheet fefet featuring memory window of 1.8 V at record low write voltage of 2V and endurance> 1E11 cycles | Yu-Rui Chen Yi-Chun Liu Zefu Zhao Wan-Hsuan Hsieh Jia-Yang Lee | 2023/6/11 | |
Study of Backscattering Effects on the Particle Identification | 37th International Cosmic Ray Conference | ES Seo J Wu S Aggarwal Y Amare D Angelaszek | 2022/3 |
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array | H-L Chiang J-F Wang K-H Lin C-H Nien J-J Wu | 2022/6/12 | |
Measurement of high-energy cosmic-ray proton spectrum from the ISS-CREAM experiment | The Astrophysical Journal | GH Choi ES Seo S Aggarwal Y Amare D Angelaszek | 2022/11/25 |
Method and apparatus for processing intra-prediction-based video signal | 2023/7/27 | ||
Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density … | C-Y Liao K-Y Hsiang Z-F Lou H-C Tseng C-Y Lin | 2022/6/12 | |
Method and device for filtering | 2023/2/2 | ||
The demonstration of high-quality carbon nanotubes as through-silicon vias (TSVs) for three-dimensional connection stacking and power-via technology | IEEE Transactions on Electron Devices | C-M Yen S-Y Chang K-C Chen Y-J Feng L-H Chen | 2022/1/14 |
