Mengwei Si（司梦维）
Purdue University
H-index: 39
North America-United States
Top articles of Mengwei Si（司梦维）
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2 | IEEE Electron Device Letters | Tao Hu Xiaoqing Sun Mingkai Bai Xinpei Jia Saifei Dai | 2024/3/27 |
Extremely Thin Amorphous Indium Oxide Transistors | Adam Charnas Zhuocheng Zhang Zehao Lin Dongqi Zheng Jie Zhang | 2024/3 | |
Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited InO Thin-Film Transistors | IEEE Transactions on Electron Devices | Chang Niu Zehao Lin Vahid Askarpour Zhuocheng Zhang Pukun Tan | 2024/2/26 |
Can interface layer be really free for HfxZr1-xO2 based ferroelectric field-effect transistors with oxide semiconductor channel? | IEEE Electron Device Letters | Tianning Cui Danyang Chen Yulong Dong Yuyan Fan Zikang Yao | 2024/1/18 |
A low-leakage zinc oxide transistor by atomic layer deposition | IEEE Electron Device Letters | Zhiyu Lin Ziheng Wang Jinxiu Zhao Xiuyan Li Mengwei Si | 2023/1/3 |
Atomic layer deposited (ald) oxide semiconductors for integrated circuits (ics) | 2023/6/8 | ||
1.1 A/mm ß-Ga2O3-on-SiC RF MOSFETs with 2.3 W/mm Pout and 30% PAE at 2 GHz and fT/fmax of 27.6/57 GHz | Min Zhou Hong Zhou Sen Huang Mengwei Si Yuhao Zhang | 2023/12/9 | |
Correlation between crystal phase composition, wake-up effect, and endurance performance in ferroelectric HfxZr1− xO2 thin films | Applied Physics Letters | Danyang Chen Shuman Zhong Yulong Dong Tianning Cui Jingquan Liu | 2023/5/22 |
Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In2O3 TFTs Reaching the Quantum Limit | C Niu Z Lin Z Zhang P Tan M Si | 2023/12/9 | |
Interfacial layer engineering in sub-5-nm HZO: Enabling low-temperature process, low-voltage operation, and high robustness | IEEE Transactions on Electron Devices | Eunseon Yu Xiao Lyu Mengwei Si D Ye Peide Kaushik Roy | 2023/5/10 |
The impact of intrinsic RC coupling with domains flipping on polarization switching time of Hf0.5Zr0.5O2 ferroelectric capacitor | IEEE Electron Device Letters | Yulong Dong Tianning Cui Danyang Chen Jingquan Liu Mengwei Si | 2023/7/13 |
Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights | IEEE Electron Device Letters | Zhiyu Lin Jinxiu Zhao Xiuyan Li Lu Kang Junkang Li | 2023/5/10 |
The impact of parasitic capacitance on the memory characteristics of 2T0C DRAM and new writing strategy | IEEE Electron Device Letters | Liankai Zheng Ziheng Wang Zhiyu Lin Mengwei Si | 2023/6/20 |
Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration | IEEE Transactions on Electron Devices | Pai-Ying Liao Dongqi Zheng Sami Alajlouni Zhuocheng Zhang Mengwei Si | 2023/1/16 |
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing | Zhuocheng Zhang Zehao Lin Chang Niu Mengwei Si Muhammad A Alam | 2023/6/11 | |
Ionic control over ferroelectricity in 2D layered van der Waals capacitors | ACS Applied Materials & Interfaces | Sabine M Neumayer Mengwei Si Junkang Li Pai-Ying Liao Lei Tao | 2022/1/5 |
Strategy toward High-Mobility Oxide Semiconductor Thin-Film Transistors by Atomic Layer Deposition | Mengwei Si Ziheng Wang Xiuyan Li | 2022/8/21 | |
Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs | Pai-Ying Liao Sami Alajlouni Mengwei Si Zhuocheng Zhang Zehao Lin | 2022/6/12 | |
Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer | IEEE Transactions on Electron Devices | Pai-Ying Liao Krutarth Khot Sami Alajlouni Mike Snure Jinhyun Noh | 2022/11/18 |
Scaling of Atomic-Layer-Deposited Atomically Thin Indium Oxide Transistors | Nat. Electron | Mengwei Si Zehao Lin Zhizhong Chen Xing Sun Haiyan Wang | 2022 |
Co-Authors
