Matthew Halsall
Manchester University
H-index: 26
North America-United States
Top articles of Matthew Halsall
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1− xN layers | Journal of Applied Physics | L Sun P Kruszewski VP Markevich CA Dawe AR Peaker | 2024/5/7 |
Modeling the Non-Hermitian Infinity-Loop Micro-Resonator over a Free Spectral Range Reveals the Characteristics for Operation at an Exceptional Point | Symmetry | Tianrui Li Matthew P Halsall Iain F Crowe | 2024/4/4 |
Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis | Tarek O Abdul Fattah Janet Jacobs Vladimir P Markevich Nikolay V Abrosimov Ian D Hawkins | 2024/1/8 | |
Alloy splitting of the FeGa acceptor level in dilute AlxGa1− xN | Applied Physics Letters | P Kruszewski VP Markevich AR Peaker J Plesiewicz P Prystawko | 2023/11/27 |
Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors | Solar Energy Materials and Solar Cells | Tarek O Abdul Fattah Vladimir P Markevich Diana Gomes José Coutinho Nikolay V Abrosimov | 2023/8/15 |
Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN | physica status solidi (b) | Vladimir P Markevich Matthew P Halsall Lijie Sun Iain F Crowe Anthony R Peaker | 2023/8 |
Deep-level defects in Ga-doped silicon crystals | AIP Conference Proceedings | Tarek O Abdul Fattah Vladimir P Markevich Joyce Ann De Guzman José Coutinho Nikolay V Abrosimov | 2023/6/27 |
Analysis of Impurity-Related Radiative Transitions in Silicon Materials Using Temperature-Dependent Photoluminescence | Tarek O Abdul Fattah Janet Jacobs Vladimir P Markevich Nikolay V Abrosimov Matthew P Halsall | 2023/6/11 | |
High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium | Journal of Science: Advanced Materials and Devices | Tarek O Abdul Fattah Janet Jacobs Vladimir P Markevich Nikolay V Abrosimov Matthew P Halsall | 2023/12/1 |
Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon | physica status solidi (a) | Tarek O Abdul Fattah Vladimir P Markevich Joyce Ann T De Guzman José Coutinho Stanislau B Lastovskii | 2022/9 |
Formation and elimination of electrically active thermally-induced defects in float-zone-grown silicon crystals | AIP Conference Proceedings | Joyce Ann T De Guzman Vladimir P Markevich Jack Mullins Nicholas Grant John D Murphy | 2022/8/24 |
Electronic properties and structure of boron–hydrogen complexes in crystalline silicon | Solar RRL | Joyce Ann T De Guzman Vladimir P Markevich José Coutinho Nikolay V Abrosimov Matthew P Halsall | 2022/5 |
Investigation of Electrically Active Defects in Gan Using Deep-level Transient Spectroscopy | Xiaoyan Tang | 2022 | |
Spectroscopic Investigation of Shallow Hole Traps in Ga-and B-doped Czochralski Silicon: Insight into Light-Induced Degradation | ACS Applied Energy Materials | Abigail R Meyer Tarek O Abdul Fattah P Craig Taylor Michael B Venuti Serena Eley | 2022/11/7 |
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer | Journal of Applied Physics | Joyce Ann T De Guzman Vladimir P Markevich Ian D Hawkins José Coutinho Hussein M Ayedh | 2021/12/28 |
Indium‐doped silicon for solar cells—light‐induced degradation and deep‐level traps | physica status solidi (a) | Joyce Ann T De Guzman Vladimir P Markevich Ian D Hawkins Hussein M Ayedh José Coutinho | 2021/12 |
The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n+–p Diodes upon Irradiation with Alpha Particles | physica status solidi (a) | Dzmitriy A Aharodnikau Stanislau B Lastovskii Sergei V Shpakovski Vladimir P Markevich Matthew P Halsall | 2021/12 |
GaN surface sputter damage investigated using deep level transient spectroscopy | Materials science in semiconductor processing | Xiaoyan Tang Simon Hammersley Vladimir Markevich Ian Hawkins Iain Crowe | 2021/5/1 |
Acceptor-oxygen defects in silicon | Joyce Ann T De Guzman Vladimir P Markevich Ian D Hawkins José Coutinho Hussein M Ayedh | 2021/12/28 | |
Passivation of thermally-induced defects with hydrogen in float-zone silicon | Journal of Physics D: Applied Physics | JAT De Guzman VP Markevich D Hiller ID Hawkins MP Halsall | 2021/4/29 |
