Masashi KUROSAWA
Nagoya University
H-index: 25
Asia-Japan
Top articles of Masashi KUROSAWA
Ge1− xSnx layers with x∼ 0.25 on InP (001) substrate grown by low-temperature molecular beam epitaxy reaching 70° C and in-situ Sb doping
Materials Science in Semiconductor Processing
2024/6/15
Masashi Kurosawa
H-Index: 16
Layer transfer of epitaxially grown Ge-lattice-matched Si27. 8Ge64. 2Sn8 films
Materials Science in Semiconductor Processing
2024/6/15
Tensile-strained Ge1− x Sn x layers on Si (001) substrate by solid-phase epitaxy featuring seed layer introduction
Japanese Journal of Applied Physics
2024/4/18
Masashi Kurosawa
H-Index: 16
Planar-type SiGe thermoelectric generator with double cavity structure
Applied Physics Letters
2024/3/18
(Invited) Epitaxial Growth Technique for Si1−X Sn x Binary Alloy Thin Films
Electrochemical Society Meeting Abstracts 244
2023/12/22
Masashi Kurosawa
H-Index: 16
Effect of nanostructuring on thermoelectric performance of SiGe thin films
Japanese Journal of Applied Physics
2023/9/13
Masashi Kurosawa
H-Index: 16
Masahiro Nomura
H-Index: 1
Self-organized Ge1− x Sn x quantum dots formed on insulators and their room temperature photoluminescence
Japanese Journal of Applied Physics
2023/7/31
Masashi Kurosawa
H-Index: 16
Heteroepitaxial growth of CaGe2 films on high-resistivity Si (111) substrates and its application for germanane synthesizing
Materials Science in Semiconductor Processing
2023/7/1
Kazuya Okada
H-Index: 1
Masashi Kurosawa
H-Index: 16
Lattice-matched growth of high-Sn-content (x∼ 0.1) Si1− x Sn x layers on Si1− y Ge y buffers using molecular beam epitaxy
Applied Physics Express
2023/4/3
Masashi Kurosawa
H-Index: 16
Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers
Japanese Journal of Applied Physics
2023/2/20
Shinya Kato
H-Index: 9
Masashi Kurosawa
H-Index: 16
Noritaka Usami
H-Index: 27
Yasuyoshi Kurokawa
H-Index: 14
Superior power generation capacity of GeSn over Si demonstrated in cavity-free thermoelectric device architecture
Japanese journal of applied physics
2023/2/9
Masashi Kurosawa
H-Index: 16
Invited; Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications
2023
Masashi Kurosawa
H-Index: 16
First-principles study on two-dimensional materials of silicon/germanium
2023
Investigation of Band Structure in Strained Single Crystalline Si1-X Sn X
ECS Transactions
2022/9/30
Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1− x− y Si x Sn y epitaxial layers grown on GaAs (001)
Japanese journal of applied physics
2022/7/15
High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride
AIP Advances
2022/5/1
Masashi Kurosawa
H-Index: 16
Takuya Sasaki
H-Index: 5
Nico Alexander Gaida
H-Index: 4
Masashi Hasegawa
H-Index: 14
Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators
Japanese Journal of Applied Physics
2022/4/7
Masashi Kurosawa
H-Index: 16
Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments
Japanese Journal of Applied Physics
2022/2/18
Masashi Kurosawa
H-Index: 16
Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region
Advanced Energy Materials
2022/1
Close-spaced evaporation of CaGe2 films for scalable GeH film formation
Materials Science in Semiconductor Processing
2021/9/1
Masashi Kurosawa
H-Index: 16
Co-Authors
