Markus Pristovsek
Nagoya University
H-index: 30
Asia-Japan
Top articles of Markus Pristovsek
Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
arXiv preprint arXiv:2402.03180
2024/2/5
Pietro Pampili
H-Index: 6
Markus Pristovsek
H-Index: 15
Anisotropic hole transport along [0001] and [11 2¯ 0] direction in p-doped (10 1¯ 0) GaN
Journal of Applied Physics
2023/12/21
Jia Wang
H-Index: 7
Markus Pristovsek
H-Index: 15
Droop and light extraction of InGaN-based red micro-light-emitting diodes
Semiconductor Science and Technology
2023/11/21
Dislocation suppresses sidewall‐surface recombination of micro‐LEDs
Laser & Photonics Reviews
2023/10
Markus Pristovsek
H-Index: 15
Wentao Cai
H-Index: 3
Impact of graphene state on the orientation of III–nitride
Applied Physics Letters
2023/9/18
Jeong-Hwan Park
H-Index: 1
Nan Hu
H-Index: 2
Jia Wang
H-Index: 7
Xu Yang
H-Index: 8
Markus Pristovsek
H-Index: 15
Growth of N-Polar (000 1-) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire
Crystals
2023/7/7
Markus Pristovsek
H-Index: 15
Pietro Pampili
H-Index: 6
Stress relaxation of AlGaN on nonpolar m-plane GaN substrate
Journal of Applied Physics
2023/6/14
Martin Frentrup
H-Index: 13
Markus Pristovsek
H-Index: 15
Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs
Advanced Optical Materials
2023/5
2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters
Nanomaterials
2023/3/16
Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates
Japanese Journal of Applied Physics
2023/2/16
Direct Determination of the Internal Quantum Efficiency of Light‐Emitting Diodes
physica status solidi (RRL)–Rapid Research Letters
2023/1
Markus Pristovsek
H-Index: 15
Wurtzite Al1− xGaxPyN1− y barrier layer growth for high electron mobility transistors
Journal of Crystal Growth
2022/12/15
Markus Pristovsek
H-Index: 15
High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
Applied Physics Letters
2022/11/21
Wentao Cai
H-Index: 3
Jia Wang
H-Index: 7
Jeong-Hwan Park
H-Index: 1
Yaqiang Liao
H-Index: 2
Markus Pristovsek
H-Index: 15
Research data supporting" Defect characterisation of {10-13} GaN by electron microscopy"
2022/11/4
Gunnar Kusch
H-Index: 9
Martin Frentrup
H-Index: 13
Nan Hu
H-Index: 2
Rachel Oliver
H-Index: 29
Markus Pristovsek
H-Index: 15
Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy
Applied Physics Letters
2022/8/22
Nan Hu
H-Index: 2
Markus Pristovsek
H-Index: 15
Interplay of sidewall damage and light extraction efficiency of micro-LEDs
Optics Letters
2022/5/1
Defect characterization of {101¯ 3} GaN by electron microscopy
Journal of Applied Physics
2022/1/21
The effect of interface diffusion on Raman spectra of Wurtzite short-period GaN/AlN Superlattices
Nanomaterials
2021/9/14
Markus Pristovsek
H-Index: 15
X-ray characterisation of the basal stacking fault densities of (11-22) GaN
CrystEngComm
2021
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
Scientific Reports
2021/3/24
Yaqiang Liao
H-Index: 2
Markus Pristovsek
H-Index: 15
Co-Authors
