Mani Shankar Yadav

About Mani Shankar Yadav

Mani Shankar Yadav, With an exceptional h-index of 1 and a recent h-index of 1 (since 2020), a distinguished researcher at Indian Institute of Technology Ropar, specializes in the field of Resistive RAM, ReRAM Simulation Modeling for Storage Class Memory and Neuro-inspired Computing.

His recent articles reflect a diverse array of research interests and contributions to the field:

To be appear at VLSID 2024 Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode

Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode

Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode-Based Memristor

Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory

Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing

How Good Silicon Oxide-based Memristor Can be?

Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering

Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory

Mani Shankar Yadav Information

University

Position

Research Scholar

Citations(all)

18

Citations(since 2020)

18

Cited By

0

hIndex(all)

1

hIndex(since 2020)

1

i10Index(all)

1

i10Index(since 2020)

1

Email

University Profile Page

Indian Institute of Technology Ropar

Google Scholar

View Google Scholar Profile

Mani Shankar Yadav Skills & Research Interests

Resistive RAM

ReRAM Simulation Modeling for Storage Class Memory and Neuro-inspired Computing

Top articles of Mani Shankar Yadav

Title

Journal

Author(s)

Publication Date

To be appear at VLSID 2024 Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode

Authorea Preprints

Kanupriya Varshney

Mani Shankar Yadav

Devarshi Mrinal Das

Brajesh Rawat

2024/1/25

Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode

Kanupriya Varshney

Mani S Yadav

Devarshi Mrinal Das

Brajesh Rawat

2024/1/6

Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode-Based Memristor

IEEE Transactions on Electron Devices

Kanupriya Varshney

Mani Shankar Yadav

Brajesh Rawat

Devarshi Mrinal Das

2023/9/4

Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory

Memories-Materials, Devices, Circuits and Systems

Avinash Kumar Gupta

Mani Shankar Yadav

Brajesh Rawat

2023/10/1

Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing

Kanupriya Varshney

Mani Shankar Yadav

Devarshi M Das

Brajesh Rawat

2022/12/11

How Good Silicon Oxide-based Memristor Can be?

Mani Shankar Yadav

Avinash Kumar Gupta

Kanupriya Varshney

Brajesh Rawat

2022/2/26

Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering

Kummara Poojith

Kanupriya Varshney

Mani Shankar Yadav

Devarshi Das

Brajesh Rawat

2022/4/7

Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory

Chaos, Solitons & Fractals

BrajeshRawat Aditya Kuber Parit

Mani Shankar Yadav

Avinash Kumar Gupta

Alexey Mikhaylov

2021

See List of Professors in Mani Shankar Yadav University(Indian Institute of Technology Ropar)

Co-Authors

H-index: 9
Brajesh Rawat

Brajesh Rawat

Indian Institute of Technology Ropar

H-index: 1
Aditya Parit

Aditya Parit

Indian Institute of Technology Ropar

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