Linyou Cao

Linyou Cao

Stanford University

H-index: 49

North America-United States

About Linyou Cao

Linyou Cao, With an exceptional h-index of 49 and a recent h-index of 39 (since 2020), a distinguished researcher at Stanford University, specializes in the field of 2D materials.

His recent articles reflect a diverse array of research interests and contributions to the field:

Correlative spectroscopic investigations of the mechanisms of inhomogeneity in CVD-grown monolayer WS2

Phase Diagram of High-Temperature Electron–Hole Quantum Droplet in Two-Dimensional Semiconductors

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

Are 2D interfaces really flat?

Excitons in strained and suspended monolayer WSe2

Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors

Giant enhancement of exciton diffusivity in two-dimensional semiconductors

Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

Linyou Cao Information

University

Position

North Carolina State University Drexel University Peking University

Citations(all)

16166

Citations(since 2020)

7612

Cited By

12236

hIndex(all)

49

hIndex(since 2020)

39

i10Index(all)

74

i10Index(since 2020)

60

Email

University Profile Page

Google Scholar

Linyou Cao Skills & Research Interests

2D materials

Top articles of Linyou Cao

Correlative spectroscopic investigations of the mechanisms of inhomogeneity in CVD-grown monolayer WS2

Science China Materials

2023/10

Phase Diagram of High-Temperature Electron–Hole Quantum Droplet in Two-Dimensional Semiconductors

ACS nano

2023/8/4

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

Advanced Materials

2023/5

Are 2D interfaces really flat?

ACS nano

2022/3/15

Zhihui Cheng
Zhihui Cheng

H-Index: 6

Linyou Cao
Linyou Cao

H-Index: 35

Excitons in strained and suspended monolayer WSe2

2D Materials

2021/10/21

Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors

IEEE Electron Device Letters

2021/8/20

Zhihui Cheng
Zhihui Cheng

H-Index: 6

Linyou Cao
Linyou Cao

H-Index: 35

Giant enhancement of exciton diffusivity in two-dimensional semiconductors

Science Advances

2020/12/18

Yifei Yu
Yifei Yu

H-Index: 26

Linyou Cao
Linyou Cao

H-Index: 35

Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

Physical Review Research

2020/9/23

Exciton Mott transition in two-dimensional semiconductors

arXiv preprint arXiv:2007.11509

2020/7/22

Linyou Cao
Linyou Cao

H-Index: 35

Emergent quantum materials

MRS Bulletin

2020/5

Fengnian Xia
Fengnian Xia

H-Index: 56

Linyou Cao
Linyou Cao

H-Index: 35

Low-loss composite photonic platform based on 2D semiconductor monolayers

Nature Photonics

2020/4

In-plane and interfacial thermal conduction of two-dimensional transition-metal dichalcogenides

Phys. Rev. Applied

2020/3/24

Yifei Yu
Yifei Yu

H-Index: 26

Linyou Cao
Linyou Cao

H-Index: 35

Engineering Substrate Interaction To Improve Hydrogen Evolution Catalysis of Monolayer MoS2 Films beyond Pt

ACS nano

2020/1/16

See List of Professors in Linyou Cao University(Stanford University)

Co-Authors

academic-engine