Kookrin Char
Seoul National University
H-index: 61
Asia-South Korea
Top articles of Kookrin Char
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor | Advanced Functional Materials | Juhan Kim Jihoon Seo Hahoon Lee Celesta S Chang Kookrin Char | 2024/3/22 |
Micron-scale FETs of fully epitaxial perovskite oxides using chemical etching | Materials Today Quantum | Jaehyeok Lee Juhan Kim Jongkyoung Ko Kookrin Char | 2024/3/1 |
Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3 | Advanced Electronic Materials | Jihoon Seo Juhan Kim Jae Ha Kim Jae Hoon Kim Kookrin Char | 2024/1 |
Low Leakage in High‐k Perovskite Gate Oxide SrHfO3 | Advanced Electronic Materials | Juhan Kim Dowon Song Hwanhui Yun Jaehyeok Lee Jae Ha Kim | 2023/6 |
Two-dimensional electron gas at interface between basno3 and laino3 | 2023/2/9 | ||
Conductance enhancement at non-polar SrHfO3/BaSnO3 interface | APS March Meeting Abstracts | Jongkyoung Ko Kookrin Char Oliver Bierwagen | 2023 |
All-perovskite ferroelectric field effect transistor based on BaSnO3 | APS March Meeting Abstracts | Hahoon Lee Bongju Kim Kookrin Char | 2023 |
Selective chemical etching for termination layer control of BaSnO3 and 2DEG formation at the LaInO3/BaSnO3 interface | APL Materials | Seonghyeon Kim Bongju Kim Kookrin Char | 2023/12/1 |
Transport Properties of the Interface Analyzed by Poisson-Schrödinger Equation | Physical Review Applied | Youjung Kim Seonghyeon Kim Hyeongmin Cho Young Mo Kim Hiromichi Ohta | 2022/1/25 |
Critical Role of Terminating Layer in Formation of 2DEG State at the LaInO3/BaSnO3 Interface | Advanced Materials Interfaces | Seonghyeon Kim Mikk Lippmaa Jaehyeok Lee Hyeongmin Cho Juhan Kim | 2022/11 |
Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3 | Applied Physics Letters | Jaehyeok Lee Hyeongmin Cho Bongju Kim Myoungho Jeong Kiyoung Lee | 2022/10/3 |
Thin film laminate structure, integrated device including the same, and method of manufacturing the thin film laminate structure | 2022/7/28 | ||
Deep-UV Transparent Conducting Oxide La-Doped SrSnO3 with a High Figure of Merit | ACS Applied Electronic Materials | Juhan Kim Hwanhui Yun Jihoon Seo Jae Ha Kim Jae Hoon Kim | 2022/7/11 |
High-k perovskite gate oxide for modulation beyond 1014 cm−2 | Science Advances | Dowon Song Myoungho Jeong Juhan Kim Bongju Kim Jae Ha Kim | 2022/3/18 |
Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface | Advanced Materials Interfaces | Daniel Pfützenreuter Seonghyeon Kim Hyeongmin Cho Oliver Bierwagen Martina Zupancic | 2022/12 |
High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface | ACS Applied Electronic Materials | Hyeongmin Cho Dowon Song Youjung Kim Bongju Kim Kookrin Char | 2021/12/21 |
Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals | physica status solidi (a) | Zbigniew Galazka Klaus Irmscher Steffen Ganschow Martina Zupancic Wahib Aggoune | 2021/8 |
The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces | Communications Materials | Young Mo Kim Youjung Kim Kookrin Char | 2021/7/13 |
Fermi level pinning and band bending in δ-doped BaSnO3 | Applied Physics Letters | Youjung Kim Hyeongmin Cho Kookrin Char | 2021/2/1 |
Role of the interface in controlling the epitaxial relationship between orthorhombic and cubic | Physical Review Materials | Martina Zupancic Wahib Aggoune Toni Markurt Youjung Kim Young Mo Kim | 2020/12/22 |
